All MOSFET. IXTJ6N150 Datasheet

 

IXTJ6N150 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXTJ6N150
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 67 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.85 Ohm
   Package: TO-247

 IXTJ6N150 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTJ6N150 Datasheet (PDF)

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 ixtj6n150.pdf

IXTJ6N150 IXTJ6N150

Advance Technical InformationHigh Voltage VDSS = 1500VIXTJ6N150ID25 = 3APower MOSFET RDS(on) 3.85 (Electrically Isolated Tab)N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeISO TO-247TME153432Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1500 VVDGR TJ = 25C to 150C, RGS = 1M 1500 VGDIsolat

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