IXTJ4N150 Specs and Replacement

Type Designator: IXTJ4N150

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm

Package: TO-247

IXTJ4N150 substitution

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IXTJ4N150 datasheet

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IXTJ4N150

Preliminary Technical Information High Voltage VDSS = 1500V IXTJ4N150 ID25 = 2.5A Power MOSFET RDS(on) 6 (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1500 V VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V G D Iso... See More ⇒

Detailed specifications: IXTL2X180N10T, IXTL2N450, IXTK210P10T, IXTK20N150, IXTK120P20T, IXTK120N65X2, IXTK102N65X2, IXTJ6N150, IRF9640, IXTJ3N150, IXTI76N25T, IXTI12N50P, IXTI10N60P, IXTH80N65X2, IXTH80N075L2, IXTH64N65X, IXTH64N10L2

Keywords - IXTJ4N150 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.