IXTI76N25T MOSFET. Datasheet pdf. Equivalent
Type Designator: IXTI76N25T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 460 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 76 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 92 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 480 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
Package: TO-262
IXTI76N25T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXTI76N25T Datasheet (PDF)
ixti76n25t.pdf
Preliminary Technical InformationIXTA76N25T IXTH76N25TVDSS = 250VTrench GateIXTI76N25T IXTP76N25TID25 = 76APower MOSFETIXTQ76N25T RDS(on) 39m N-Channel Enhancement ModeTypical avalanche BV = 300VTO-263 (IXTA) TO-247 (IXTH) TO-262 (IXTI) TO-220 (IXTP)GSGGGDD(TAB) D (TAB) (TAB) (TAB)SSSSymbol Test Conditions Maximum
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: FIR11NS70AFG
History: FIR11NS70AFG
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