IXTI76N25T Specs and Replacement

Type Designator: IXTI76N25T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 460 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 76 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 480 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm

Package: TO-262

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IXTI76N25T datasheet

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IXTI76N25T

Preliminary Technical Information IXTA76N25T IXTH76N25T VDSS = 250V Trench Gate IXTI76N25T IXTP76N25T ID25 = 76A Power MOSFET IXTQ76N25T RDS(on) 39m N-Channel Enhancement Mode Typical avalanche BV = 300V TO-263 (IXTA) TO-247 (IXTH) TO-262 (IXTI) TO-220 (IXTP) G S G G G D D (TAB) D (TAB) (TAB) (TAB) S S S Symbol Test Conditions Maximum... See More ⇒

Detailed specifications: IXTK210P10T, IXTK20N150, IXTK120P20T, IXTK120N65X2, IXTK102N65X2, IXTJ6N150, IXTJ4N150, IXTJ3N150, AON7403, IXTI12N50P, IXTI10N60P, IXTH80N65X2, IXTH80N075L2, IXTH64N65X, IXTH64N10L2, IXTH62N65X2, IXTH52N65X

Keywords - IXTI76N25T MOSFET specs

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