All MOSFET. IXTF1N450 Datasheet

 

IXTF1N450 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXTF1N450
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 165 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 4500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 6.5 V
   |Id|ⓘ - Maximum Drain Current: 0.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 40 nC
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 78 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 85 Ohm
   Package: I4-PAK

 IXTF1N450 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTF1N450 Datasheet (PDF)

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 ixtf1n450.pdf

IXTF1N450 IXTF1N450

Advance Technical InformationHigh Voltage VDSS = 4500VIXTF1N450Power MOSFETID25 = 0.9A RDS(on) 85 (Electrically Isolated Tab)ISOPLUS i4-PakTMN-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings12Isolated TabVDSS TJ = 25C to 150C 4500 V5VDGR TJ = 25C to 150C, RGS = 1M 4500 VVGSS Continuous 20 V1 = Gate

Datasheet: IXTH12N45 , IXTH12N150 , IXTH10N60A , IXTH10N60 , IXTH06N220P3HV , IXTH05N250P3HV , IXTH04N300P3HV , IXTH02N450HV , 12N60 , IXTF02N450 , IXTA8N65X2 , IXTA80N075L2 , IXTA64N10L2 , IXTA4N65X2 , IXTA4N150HV , IXTA3N150HV , IXTA3N120TRL .

 

 
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