IXTF02N450 Specs and Replacement
Type Designator: IXTF02N450
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 78 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 4500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 48 nS
Cossⓘ - Output Capacitance: 19 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 750 Ohm
Package: I4-PAK
IXTF02N450 substitution
- MOSFET ⓘ Cross-Reference Search
IXTF02N450 datasheet
ixtf02n450.pdf
Advance Technical Information High Voltage VDSS = 4500V IXTF02N450 Power MOSFET ID25 = 200mA RDS(on) 750 (Electrically Isolated Tab) ISOPLUS i4-PakTM N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings 1 2 Isolated Tab VDSS TJ = 25 C to 150 C 4500 V 5 VDGR TJ = 25 C to 150 C, RGS = 1M 4500 V VGSS Continuous 20 V 1 = Ga... See More ⇒
ixtf03n400.pdf
Advance Technical Information High Voltage VDSS = 4000V IXTF03N400 Power MOSFET ID25 = 300mA RDS(on) 300 ( Electrically Isolated Tab) N-Channel Enhancement Mode ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 4000 V VDGR TJ = 25 C to 150 C, RGS = 1M 4000 V 1 VGSS Continuous 20 V 2 5 Isolated Tab VGSM T... See More ⇒
Detailed specifications: IXTH12N150, IXTH10N60A, IXTH10N60, IXTH06N220P3HV, IXTH05N250P3HV, IXTH04N300P3HV, IXTH02N450HV, IXTF1N450, IRF9540N, IXTA8N65X2, IXTA80N075L2, IXTA64N10L2, IXTA4N65X2, IXTA4N150HV, IXTA3N150HV, IXTA3N120TRL, IXTA3N120HV
Keywords - IXTF02N450 MOSFET specs
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