All MOSFET. IXTA3N150HV Datasheet

 

IXTA3N150HV MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXTA3N150HV
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 38.6 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 7.3 Ohm
   Package: TO-263

 IXTA3N150HV Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTA3N150HV Datasheet (PDF)

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