IXTA3N150HV - описание и поиск аналогов

 ..1. Size:142K  ixys
 ixta3n150hv.pdf 

Preliminary Technical Information High Voltage VDSS = 1500V IXTA3N150HV ID25 = 3A Power MOSFET RDS(on) 7.3 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 Symbol Test Conditions Maximum Ratings G S VDSS TJ = 25 C to 150 C 1500 V VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V D (Tab) VGSS Continuous 30 V VGSM Transi

 7.1. Size:562K  ixys
 ixta3n120 ixtp3n120.pdf 

VDSS ID25 RDS(on) High Voltage IXTA 3N120 Power MOSFETs 1200 V 3 A 4.5 IXTP 3N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 1200 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1200 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S ID25 TC = 25 C3 A IDM TC =

 7.2. Size:560K  ixys
 ixta3n120trl.pdf 

VDSS ID25 RDS(on) High Voltage IXTA 3N120 Power MOSFETs 1200 V 3 A 4.5 IXTP 3N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 1200 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1200 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S ID25 TC = 25 C3 A IDM TC =

 7.3. Size:184K  ixys
 ixta3n100d2hv.pdf 

Preliminary Technical Information High Voltage VDSX = 1000V IXTA3N100D2HV Depletion Mode ID(on) > 3A MOSFET RDS(on) 6 D N-Channel G TO-263HV S G S D (Tab) Symbol Test Conditions Maximum Ratings VDSX TJ = 25 C to 150 C 1000 V G = Gate D = Drain VGSX Continuous 20 V S = Source Tab = Drain VGSM Transient 30 V PD TC = 25 C 1

 7.4. Size:138K  ixys
 ixta3n120hv.pdf 

High Voltage VDSS = 1200V IXTA3N120HV ID25 = 3A Power MOSFET RDS(on) 4.5 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 Symbol Test Conditions Maximum Ratings G S VDSS TJ = 25 C to 150 C 1200 V VDGR TJ = 25 C to 150 C, RGS = 1M 1200 V D (Tab) VGSS Continuous 20 V VGSM Transient 30 V G = Gate D

 7.5. Size:150K  ixys
 ixta3n100p ixth3n100p ixtp3n100p.pdf 

IXTA3N100P VDSS = 1000V Polar VHVTM IXTH3N100P ID25 = 3A Power MOSFET IXTP3N100P RDS(on) 4.8 N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25 C to 150 C 1000 V TO-220 (IXTP) VDGR TJ = 25 C to 150 C, RGS = 1M 1000 V VGSS Continuous 20 V VGSM Transient 30 V (TAB)

 7.6. Size:175K  ixys
 ixta3n120 ixtp3n120 ixth3n120.pdf 

High Voltage VDSS = 1200V IXTA3N120 Power MOSFET ID25 = 3A IXTP3N120 RDS(on) 4.5 IXTH3N120 N-Channel Enhancement Mode TO-263 AA (IXTA) Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25 C to 150 C 1200 V VDGR TJ = 25 C to 150 C, RGS = 1M 1200 V VGSS Continuous