IXKP35N60C5 Datasheet. Specs and Replacement

Type Designator: IXKP35N60C5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO-220AB

IXKP35N60C5 substitution

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IXKP35N60C5 datasheet

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IXKP35N60C5

IXKH 35N60C5 Advanced Technical Information IXKP 35N60C5 ID25 = 35 A CoolMOS 1) Power MOSFET VDSS = 600 V RDS(on) max = 0.1 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D D(TAB) S S TO-220 AB (IXKP) G D S Features MOSFET fast CoolMOS 1) power MOSFET Symbol Conditions Maximum Ratings 4th generation V... See More ⇒

Detailed specifications: IXTA15N50L2, IXTA130N10T-TRL, IXTA12N65X2, IXTA08N100D2HV, IXTA05N100HV, IXTA02N450HV, IXTA02N250HV, IXTA02N250, TK10A60D, IXKG25N80C, IXFY9130, IXFY5N50P3, IXFY4N60P3, IXFX90N60X, IXFX44N55Q, IXFX32N90P, IXFX30N50Q

Keywords - IXKP35N60C5 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.