All MOSFET. IXKP35N60C5 Datasheet

 

IXKP35N60C5 Datasheet and Replacement


   Type Designator: IXKP35N60C5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO-220AB
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IXKP35N60C5 Datasheet (PDF)

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IXKP35N60C5

IXKH 35N60C5 Advanced Technical InformationIXKP 35N60C5ID25 = 35 ACoolMOS 1) Power MOSFETVDSS = 600 VRDS(on) max = 0.1 N-Channel Enhancement ModeLow RDSon, High VDSS MOSFETUltra low gate chargeDTO-247 AD (IXKH)GGD D(TAB)SSTO-220 AB (IXKP)GDSFeaturesMOSFET fast CoolMOS 1) power MOSFETSymbol Conditions Maximum Ratings4th generationV

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History: NTMD5836NLR2G | SM4186T9RL | APT10021JFLL | NCE30P12BS | SSW65R190S2 | NP180N04TUJ | SRT10N160LD

Keywords - IXKP35N60C5 MOSFET datasheet

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