All MOSFET. IXKG25N80C Datasheet

 

IXKG25N80C Datasheet and Replacement


   Type Designator: IXKG25N80C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: TO-264
 

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IXKG25N80C Datasheet (PDF)

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IXKG25N80C

ADVANCE TECHNICAL INFORMATION IXKG 25N80CCoolMOSTM Power MOSFETVDSS = 800 VISO264TMID25 = 25 AElectrically Isolated Back Surface RDS(on) = 150 mN-Channel Enhancement ModeLow RDS(on), High Voltage MOSFETSymbol Test Conditions Maximum RatingsISO264TMVDSS TJ = 25C to 150C 800 VVGS Continuous 20 VID25 TC = 25C 25 AGID90 TC = 90C 9 AD

Datasheet: IXTA130N10T-TRL , IXTA12N65X2 , IXTA08N100D2HV , IXTA05N100HV , IXTA02N450HV , IXTA02N250HV , IXTA02N250 , IXKP35N60C5 , P60NF06 , IXFY9130 , IXFY5N50P3 , IXFY4N60P3 , IXFX90N60X , IXFX44N55Q , IXFX32N90P , IXFX30N50Q , IXFX260N17T .

History: JMSH0606AGQ

Keywords - IXKG25N80C MOSFET datasheet

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