All MOSFET. IXKG25N80C Datasheet

 

IXKG25N80C Datasheet and Replacement


   Type Designator: IXKG25N80C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 166 nC
   tr ⓘ - Rise Time: 25 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: TO-264
 

 IXKG25N80C substitution

   - MOSFET ⓘ Cross-Reference Search

 

IXKG25N80C Datasheet (PDF)

 ..1. Size:498K  ixys
 ixkg25n80c.pdf pdf_icon

IXKG25N80C

ADVANCE TECHNICAL INFORMATION IXKG 25N80CCoolMOSTM Power MOSFETVDSS = 800 VISO264TMID25 = 25 AElectrically Isolated Back Surface RDS(on) = 150 mN-Channel Enhancement ModeLow RDS(on), High Voltage MOSFETSymbol Test Conditions Maximum RatingsISO264TMVDSS TJ = 25C to 150C 800 VVGS Continuous 20 VID25 TC = 25C 25 AGID90 TC = 90C 9 AD

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Keywords - IXKG25N80C MOSFET datasheet

 IXKG25N80C cross reference
 IXKG25N80C equivalent finder
 IXKG25N80C lookup
 IXKG25N80C substitution
 IXKG25N80C replacement

 

 
Back to Top

 


 
.