IXKG25N80C Datasheet. Specs and Replacement

Type Designator: IXKG25N80C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: TO-264

IXKG25N80C substitution

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IXKG25N80C datasheet

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IXKG25N80C

ADVANCE TECHNICAL INFORMATION IXKG 25N80C CoolMOSTM Power MOSFET VDSS = 800 V ISO264TM ID25 = 25 A Electrically Isolated Back Surface RDS(on) = 150 m N-Channel Enhancement Mode Low RDS(on), High Voltage MOSFET Symbol Test Conditions Maximum Ratings ISO264TM VDSS TJ = 25 C to 150 C 800 V VGS Continuous 20 V ID25 TC = 25 C 25 A G ID90 TC = 90 C 9 A D ... See More ⇒

Detailed specifications: IXTA130N10T-TRL, IXTA12N65X2, IXTA08N100D2HV, IXTA05N100HV, IXTA02N450HV, IXTA02N250HV, IXTA02N250, IXKP35N60C5, AO4407, IXFY9130, IXFY5N50P3, IXFY4N60P3, IXFX90N60X, IXFX44N55Q, IXFX32N90P, IXFX30N50Q, IXFX260N17T

Keywords - IXKG25N80C MOSFET specs

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