All MOSFET. IXFY5N50P3 Datasheet

 

IXFY5N50P3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXFY5N50P3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 114 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.65 Ohm
   Package: TO-252

 IXFY5N50P3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFY5N50P3 Datasheet (PDF)

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 ixfa5n50p3 ixfp5n50p3 ixfy5n50p3.pdf

IXFY5N50P3 IXFY5N50P3

Advance Technical InformationPolar3 TM HiPerFETTM VDSS = 500VIXFY5N50P3Power MOSFETs ID25 = 5AIXFA5N50P3 RDS(on) 1.65 IXFP5N50P3N-Channel Enhancement ModeAvalanche RatedTO-252 (IXFY)Fast Intrinsic RectifierGSD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 V TO-263 AA (IXFA)VDGR TJ = 25C to 150C, R

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: BLL6H0514-25

 

 
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