IXFY5N50P3 Specs and Replacement
Type Designator: IXFY5N50P3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 114 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 50 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.65 Ohm
Package: TO-252
IXFY5N50P3 substitution
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IXFY5N50P3 datasheet
ixfa5n50p3 ixfp5n50p3 ixfy5n50p3.pdf
Advance Technical Information Polar3 TM HiPerFETTM VDSS = 500V IXFY5N50P3 Power MOSFETs ID25 = 5A IXFA5N50P3 RDS(on) 1.65 IXFP5N50P3 N-Channel Enhancement Mode Avalanche Rated TO-252 (IXFY) Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V TO-263 AA (IXFA) VDGR TJ = 25 C to 150 C, R... See More ⇒
Detailed specifications: IXTA08N100D2HV , IXTA05N100HV , IXTA02N450HV , IXTA02N250HV , IXTA02N250 , IXKP35N60C5 , IXKG25N80C , IXFY9130 , 4N60 , IXFY4N60P3 , IXFX90N60X , IXFX44N55Q , IXFX32N90P , IXFX30N50Q , IXFX260N17T , IXFX24N100Q3 , IXFX210N17T .
Keywords - IXFY5N50P3 MOSFET specs
IXFY5N50P3 cross reference
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IXFY5N50P3 replacement
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