All MOSFET. IXFY5N50P3 Datasheet

 

IXFY5N50P3 Datasheet and Replacement


   Type Designator: IXFY5N50P3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 114 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.65 Ohm
   Package: TO-252
 

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IXFY5N50P3 Datasheet (PDF)

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IXFY5N50P3

Advance Technical InformationPolar3 TM HiPerFETTM VDSS = 500VIXFY5N50P3Power MOSFETs ID25 = 5AIXFA5N50P3 RDS(on) 1.65 IXFP5N50P3N-Channel Enhancement ModeAvalanche RatedTO-252 (IXFY)Fast Intrinsic RectifierGSD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 V TO-263 AA (IXFA)VDGR TJ = 25C to 150C, R

Datasheet: IXTA08N100D2HV , IXTA05N100HV , IXTA02N450HV , IXTA02N250HV , IXTA02N250 , IXKP35N60C5 , IXKG25N80C , IXFY9130 , 10N65 , IXFY4N60P3 , IXFX90N60X , IXFX44N55Q , IXFX32N90P , IXFX30N50Q , IXFX260N17T , IXFX24N100Q3 , IXFX210N17T .

History: AP05N50EJ-HF

Keywords - IXFY5N50P3 MOSFET datasheet

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