IXFT40N50Q Datasheet. Specs and Replacement

Type Designator: IXFT40N50Q

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 500 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 660 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: TO-268

IXFT40N50Q substitution

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IXFT40N50Q datasheet

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ixft40n50q.pdf pdf_icon

IXFT40N50Q

Advanced Technical Information IXFH 40N50Q VDSS = 500 V HiPerFETTM IXFT 40N50Q ID25 = 40 A Power MOSFETs RDS(on) = 0.14 Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500... See More ⇒

 ..2. Size:123K  ixys
ixfh40n50q ixft40n50q.pdf pdf_icon

IXFT40N50Q

Advanced Technical Information IXFH 40N50Q VDSS = 500 V HiPerFETTM IXFT 40N50Q ID25 = 40 A Power MOSFETs RDS(on) = 0.14 Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500... See More ⇒

 7.1. Size:265K  ixys
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IXFT40N50Q

Advance Technical Information X-Class HiPerFETTM VDSS = 850V IXFT40N85XHV Power MOSFET ID25 = 40A IXFH40N85X RDS(on) 145m N-Channel Enhancement Mode Avalanche Rated TO-268HV (IXFT) Fast Intrinsic Diode G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 850 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 850 V TO-... See More ⇒

 7.2. Size:50K  ixys
ixfh40n30q ixft40n30q.pdf pdf_icon

IXFT40N50Q

IXFH 40N30Q HiPerFETTM VDSS = 300 V IXFT 40N30Q Power MOSFETs ID25 = 40 A Q-Class RDS(on) = 80 mW trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet TO-268 (IXFT) Case Style Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 300 V VGS Continuous 20 V G (TAB) VGSM Transie... See More ⇒

Detailed specifications: IXFT9N80Q, IXFT94N30T, IXFT94N30P3, IXFT70N30Q3, IXFT50N60X, IXFT50N20, IXFT46N30T, IXFT44N50Q3, IRF1405, IXFT30N60X, IXFT30N60Q, IXFT30N50Q, IXFT28N50Q, IXFT23N80Q, IXFT23N60Q, IXFT18N100Q3, IXFT17N80Q

Keywords - IXFT40N50Q MOSFET specs

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