All MOSFET. IXFQ94N30P3 Datasheet

 

IXFQ94N30P3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXFQ94N30P3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1040 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 94 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 102 nC
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 965 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: TO-3P

 IXFQ94N30P3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFQ94N30P3 Datasheet (PDF)

 ..1. Size:145K  ixys
 ixfh94n30p3 ixfq94n30p3 ixft94n30p3.pdf

IXFQ94N30P3 IXFQ94N30P3

Advance Technical InformationPolar3TM HiperFETTM VDSS = 300VIXFT94N30P3ID25 = 94APower MOSFETsIXFQ94N30P3 RDS(on) 36m IXFH94N30P3N-Channel Enhancement ModeTO-268 (IXFT)Avalanche RatedFast Intrinsic RectifierGSD (Tab)TO-3P (IXFQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 300 VGVDGR TJ = 25C to 150C

 9.1. Size:191K  ixys
 ixfp90n20x3 ixfq90n20x3 ixfh90n20x3.pdf

IXFQ94N30P3 IXFQ94N30P3

X3-Class HiPerFETTM VDSS = 200VIXFP90N20X3Power MOSFET ID25 = 90AIXFQ90N20X3 RDS(on) 12.8m IXFH90N20X3N-Channel Enhancement ModeAvalanche RatedTO-220AB (IXFP)GDD (Tab)STO-3P (IXFQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 200 VGVDGR TJ = 25C to 150C, RGS = 1M 200 VDSVGSS Continuous

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IXFP14N60P

 

 
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