All MOSFET. IXFQ30N60X Datasheet

 

IXFQ30N60X Datasheet and Replacement


   Type Designator: IXFQ30N60X
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 43 nS
   Cossⓘ - Output Capacitance: 1610 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.155 Ohm
   Package: TO-3P
 

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IXFQ30N60X Datasheet (PDF)

 ..1. Size:185K  ixys
 ixfh30n60x ixfq30n60x ixft30n60x.pdf pdf_icon

IXFQ30N60X

Preliminary Technical InformationX-Class HiPerFETTM VDSS = 600VIXFT30N60XPower MOSFET ID25 = 30AIXFQ30N60X RDS(on) 155m IXFH30N60XTO-268 (IXFT)N-Channel Enhancement ModeAvalanche RatedGFast Intrinsic DiodeSD (Tab)TO-3P (IXFQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 VGVDGR TJ = 25C to 150

 9.1. Size:129K  ixys
 ixfh34n50p3 ixfq34n50p3.pdf pdf_icon

IXFQ30N60X

Preliminary Technical InformationPolar3TM HiperFETTM VDSS = 500VIXFQ34N50P3ID25 = 34APower MOSFETsIXFH34N50P3 RDS(on) 170m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierTO-3P (IXFQ)GDSymbol Test Conditions Maximum RatingsSTabVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C, RGS = 1M 500 VTO-247

Datasheet: IXFR27N80Q , IXFR24N100Q3 , IXFR12N100F , IXFR10N100F , IXFQ94N30P3 , IXFQ60N60X , IXFQ50N60X , IXFQ34N50P3 , IRF840 , IXFQ26N50P3 , IXFQ24N60X , IXFQ20N50P3 , IXFP8N50P3 , IXFP7N60P3 , IXFP5N50P3 , IXFP5N100PM , IXFP4N60P3 .

Keywords - IXFQ30N60X MOSFET datasheet

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