All MOSFET. IXFQ30N60X Datasheet

 

IXFQ30N60X MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXFQ30N60X
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 500 W
   Maximum Drain-Source Voltage |Vds|: 600 V
   Maximum Gate-Source Voltage |Vgs|: 30 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
   Maximum Drain Current |Id|: 30 A
   Maximum Junction Temperature (Tj): 150 °C
   Rise Time (tr): 43 nS
   Drain-Source Capacitance (Cd): 1610 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.155 Ohm
   Package: TO-3P

 IXFQ30N60X Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFQ30N60X Datasheet (PDF)

 ..1. Size:185K  ixys
 ixfh30n60x ixfq30n60x ixft30n60x.pdf

IXFQ30N60X IXFQ30N60X

Preliminary Technical InformationX-Class HiPerFETTM VDSS = 600VIXFT30N60XPower MOSFET ID25 = 30AIXFQ30N60X RDS(on) 155m IXFH30N60XTO-268 (IXFT)N-Channel Enhancement ModeAvalanche RatedGFast Intrinsic DiodeSD (Tab)TO-3P (IXFQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 VGVDGR TJ = 25C to 150

 9.1. Size:129K  ixys
 ixfh34n50p3 ixfq34n50p3.pdf

IXFQ30N60X IXFQ30N60X

Preliminary Technical InformationPolar3TM HiperFETTM VDSS = 500VIXFQ34N50P3ID25 = 34APower MOSFETsIXFH34N50P3 RDS(on) 170m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierTO-3P (IXFQ)GDSymbol Test Conditions Maximum RatingsSTabVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C, RGS = 1M 500 VTO-247

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF4905 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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