IXFP5N50P3 MOSFET. Datasheet pdf. Equivalent
Type Designator: IXFP5N50P3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 114 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 50 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.65 Ohm
Package: TO-220AB
IXFP5N50P3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFP5N50P3 Datasheet (PDF)
ixfa5n50p3 ixfp5n50p3 ixfy5n50p3.pdf
Advance Technical InformationPolar3 TM HiPerFETTM VDSS = 500VIXFY5N50P3Power MOSFETs ID25 = 5AIXFA5N50P3 RDS(on) 1.65 IXFP5N50P3N-Channel Enhancement ModeAvalanche RatedTO-252 (IXFY)Fast Intrinsic RectifierGSD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 V TO-263 AA (IXFA)VDGR TJ = 25C to 150C, R
ixfp5n100pm.pdf
Advance Technical InformationVDSS = 1000VPolarTM HiPerFETTMIXFP5N100PMID25 = 2.3APower MOSFET RDS(on) 2.8 (Electrically Isolated Tab)N-Channel Enhancement ModeOVERMOLDEDAvalanche Rated(IXFP...M) OUTLINESymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1000 VGVDGR TJ = 25C to 150C, RGS = 1M 1000 VIsolated Tab
ixfa56n30x3 ixfp56n30x3 ixfh56n30x3.pdf
Preliminary Technical InformationX3-Class HiPerFETTM VDSS = 300VIXFA56N30X3Power MOSFET ID25 = 56AIXFP56N30X3 RDS(on) 27m IXFH56N30X3N-Channel Enhancement ModeTO-263 (IXFA)Avalanche RatedGSD (Tab)TO-220 (IXFP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C, RGS = 1M 300
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: FDG6335N
History: FDG6335N
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