IRFP332 MOSFET Datasheet: N-Ch, 400V, 4.5A. Full specification with pinout and replacement list

IRFP332 Specs and Replacement

   Type Designator: IRFP332
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 99 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO3P

IRFP332 substitution

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IRFP332 datasheet

8.1. Size:296K international rectifier
irfp3306pbf.pdf pdf_icon

PD - 97128 IRFP3306PbF HEXFET Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 3.3m l Uninterruptible Power Supply l High Speed Power Switching max. 4.2m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 160A c ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt R... See More ⇒

8.2. Size:329K samsung
irfp330-333 irf730-733.pdf pdf_icon

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8.3. Size:242K inchange semiconductor
irfp3306.pdf pdf_icon

isc N-Channel MOSFET Transistor IRFP3306 IIRFP3306 FEATURES Static drain-source on-resistance RDS(on) 4.2m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switc... See More ⇒

Detailed specifications: IRFP253 , IRFP254 , IRFP254A , IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , 2N7000 , IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 .