IRFP332 Datasheet. Specs and Replacement

Type Designator: IRFP332  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 99 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO3P

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IRFP332 substitution

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IRFP332 datasheet

 8.1. Size:296K  international rectifier
 irfp3306pbf.pdf pdf_icon

IRFP332

PD - 97128 IRFP3306PbF HEXFET Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 3.3m l Uninterruptible Power Supply l High Speed Power Switching max. 4.2m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 160A c ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt R... See More ⇒

 8.2. Size:329K  samsung
 irfp330-333 irf730-733.pdf pdf_icon

IRFP332

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 8.3. Size:242K  inchange semiconductor
 irfp3306.pdf pdf_icon

IRFP332

isc N-Channel MOSFET Transistor IRFP3306 IIRFP3306 FEATURES Static drain-source on-resistance RDS(on) 4.2m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switc... See More ⇒

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Detailed specifications: IRFP253, IRFP254, IRFP254A, IRFP255, IRFP260, IRFP264, IRFP330, IRFP331, IRFB4227, IRFP333, IRFP340, IRFP340A, IRFP341, IRFP342, IRFP343, IRFP344, IRFP350

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