All MOSFET. IXFL132N50P3 Datasheet

 

IXFL132N50P3 Datasheet and Replacement


   Type Designator: IXFL132N50P3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 520 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 63 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 250 nC
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 1750 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm
   Package: ISOPLUS264
 

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IXFL132N50P3 Datasheet (PDF)

 ..1. Size:144K  ixys
 ixfl132n50p3.pdf pdf_icon

IXFL132N50P3

Advance Technical InformationPolar3TM HiPerFETTM VDSS = 500VIXFL132N50P3Power MOSFET ID25 = 63A RDS(on) 43m (Electrically Isolated Tab) trr 250nsN-Channel Enhancement ModeAvalanche RatedISOPLUS264Fast Intrinsic RectifierSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VGVDGR TJ = 25C to 15

 9.1. Size:205K  ixys
 ixfl100n50p.pdf pdf_icon

IXFL132N50P3

IXFL 100N50PVDSS = 500 VPolarHVTM HiPerFETID25 = 70 APower MOSFET RDS(on) 52 m ISOPLUS264TMtrr 200 ns(Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeISOPLUS264Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 1

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