IXFL132N50P3 PDF and Equivalents Search

 

IXFL132N50P3 Specs and Replacement

Type Designator: IXFL132N50P3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 520 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 63 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V

Qg ⓘ - Total Gate Charge: 250 nC

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 1750 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm

Package: ISOPLUS264

IXFL132N50P3 substitution

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IXFL132N50P3 datasheet

 ..1. Size:144K  ixys
 ixfl132n50p3.pdf pdf_icon

IXFL132N50P3

Advance Technical Information Polar3TM HiPerFETTM VDSS = 500V IXFL132N50P3 Power MOSFET ID25 = 63A RDS(on) 43m (Electrically Isolated Tab) trr 250ns N-Channel Enhancement Mode Avalanche Rated ISOPLUS264 Fast Intrinsic Rectifier Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V G VDGR TJ = 25 C to 15... See More ⇒

 9.1. Size:205K  ixys
 ixfl100n50p.pdf pdf_icon

IXFL132N50P3

IXFL 100N50P VDSS = 500 V PolarHVTM HiPerFET ID25 = 70 A Power MOSFET RDS(on) 52 m ISOPLUS264TM trr 200 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISOPLUS264 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 1... See More ⇒

Detailed specifications: IXFP14N60P3 , IXFN94N50P2 , IXFN55N50F , IXFN40N110Q3 , IXFN260N17T , IXFN210N30P3 , IXFN200N06 , IXFL210N30P3 , 2SK3878 , IXFK90N60X , IXFK32N90P , IXFK30N50Q , IXFK260N17T , IXFK24N100Q3 , IXFK210N17T , IXFK150N30P3 , IXFK120N65X2 .

Keywords - IXFL132N50P3 MOSFET specs

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