All MOSFET. IXFI7N80P Datasheet

 

IXFI7N80P Datasheet and Replacement


   Type Designator: IXFI7N80P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 32 nC
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 133 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.44 Ohm
   Package: TO-263
 

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IXFI7N80P Datasheet (PDF)

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IXFI7N80P

IXFA 7N80P VDSS = 800 VPolarHVTM HiPerFETIXFI 7N80P ID25 = 7 APower MOSFET IXFP 7N80P RDS(on) 1.44 N-Channel Enhancement Modetrr 250 nsAvalanche RatedFast Intrinsic DiodeTO-263 (IXFA)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 800 VGVDGR TJ = 25C to 175C; RGS = 1 M 800 VS(TAB)V

Datasheet: IXFK260N17T , IXFK24N100Q3 , IXFK210N17T , IXFK150N30P3 , IXFK120N65X2 , IXFK120N30P3 , IXFK100N65X2 , IXFJ26N50P3 , IRFB3607 , IXFH94N30T , IXFH94N30P3 , IXFH80N65X2 , IXFH7N100P , IXFH76N15T2 , IXFH70N30Q3 , IXFH60N65X2 , IXFH60N60X .

Keywords - IXFI7N80P MOSFET datasheet

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