IXFI7N80P PDF and Equivalents Search

 

IXFI7N80P Specs and Replacement

Type Designator: IXFI7N80P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 133 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.44 Ohm

Package: TO-263

IXFI7N80P substitution

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IXFI7N80P datasheet

 ..1. Size:139K  ixys
 ixfi7n80p.pdf pdf_icon

IXFI7N80P

IXFA 7N80P VDSS = 800 V PolarHVTM HiPerFET IXFI 7N80P ID25 = 7 A Power MOSFET IXFP 7N80P RDS(on) 1.44 N-Channel Enhancement Mode trr 250 ns Avalanche Rated Fast Intrinsic Diode TO-263 (IXFA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 800 V G VDGR TJ = 25 C to 175 C; RGS = 1 M 800 V S (TAB) V... See More ⇒

Detailed specifications: IXFK260N17T , IXFK24N100Q3 , IXFK210N17T , IXFK150N30P3 , IXFK120N65X2 , IXFK120N30P3 , IXFK100N65X2 , IXFJ26N50P3 , K4145 , IXFH94N30T , IXFH94N30P3 , IXFH80N65X2 , IXFH7N100P , IXFH76N15T2 , IXFH70N30Q3 , IXFH60N65X2 , IXFH60N60X .

History: FDB8832F085 | UPA2562T1H

Keywords - IXFI7N80P MOSFET specs

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