IXFH60N65X2 MOSFET PDF: N-Ch, 650V, 60A. Datasheet. Full specification with pinout and replacement list

IXFH60N65X2 Specs and Replacement

   Type Designator: IXFH60N65X2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 780 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 3867 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
   Package: TO-247

IXFH60N65X2 substitution

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IXFH60N65X2 datasheet

..1. Size:113K ixys
ixfh60n65x2.pdf pdf_icon

Advance Technical Information X2-Class HiPerFETTM VDSS = 650V IXFH60N65X2 Power MOSFET ID25 = 60A RDS(on) 52m N-Channel Enhancement Mode Avalanche Rated TO-247 Fast Intrinsic Diode G D Symbol Test Conditions Maximum Ratings S D (Tab) VDSS TJ = 25 C to 150 C 650 V G = Gate D = Drain VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S =... See More ⇒

6.1. Size:157K ixys
ixfh60n60x2a.pdf pdf_icon

X2-Class HiPerFETTM VDSS = 600V IXFH60N60X2A Power MOSFET ID25 = 60A RDS(on) 52m AEC Q101 Qualified N-Channel Enhancement Mode Avalanche Rated TO-247 Fast Intrinsic Diode G D Symbol Test Conditions Maximum Ratings S D (Tab) VDSS TJ = 25 C to 150 C 600 V G = Gate D = Drain VDGR TJ = 25 C to 150 C, RGS = 1M 600 V S = Source Ta... See More ⇒

6.2. Size:166K ixys
ixfh60n60x ixfq60n60x.pdf pdf_icon

Preliminary Technical Information X-Class HiPerFETTM VDSS = 600V IXFQ60N60X Power MOSFET ID25 = 60A IXFH60N60X RDS(on) 55m N-Channel Enhancement Mode Avalanche Rated TO-3P (IXFQ) Fast Intrinsic Diode G D S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V TO-247 (IXFH) VDGR TJ = 25 C to 150 C, RGS = 1... See More ⇒

6.3. Size:302K inchange semiconductor
ixfh60n60x2a.pdf pdf_icon

isc N-Channel MOSFET Transistor IXFH60N60X2A FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 52m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.... See More ⇒