All MOSFET. IXFD80N10 Datasheet

 

IXFD80N10 Datasheet and Replacement


   Type Designator: IXFD80N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 1675 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO-258
 

 IXFD80N10 substitution

   - MOSFET ⓘ Cross-Reference Search

 

IXFD80N10 Datasheet (PDF)

 ..1. Size:60K  ixys
 ixfd80n10.pdf pdf_icon

IXFD80N10

SENSITRON SHD224514SEMICONDUCTORTECHNICAL DATADATA SHEET 1172, REV. AHERMETIC POWER MOSFETN-CHANNELFEATURES: 100 Volt, 80A, 15 mili Ohm Isolated Hermetic Metal Package Fast intrinsic Rectifier Very Low RDS (on) Low package inductance-easy to drive and protect Similar Part Type - IXFD80N10 MAXIMUM RATINGS ALL RATINGS ARE AT T = 25 C UNLESS OTHERWISE SPEC

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IXFC80N10

Keywords - IXFD80N10 MOSFET datasheet

 IXFD80N10 cross reference
 IXFD80N10 equivalent finder
 IXFD80N10 lookup
 IXFD80N10 substitution
 IXFD80N10 replacement

 

 
Back to Top

 


 
.