IXFD80N10 PDF and Equivalents Search

 

IXFD80N10 Specs and Replacement

Type Designator: IXFD80N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 500 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 1675 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: TO-258

IXFD80N10 substitution

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IXFD80N10 datasheet

 ..1. Size:60K  ixys
 ixfd80n10.pdf pdf_icon

IXFD80N10

SENSITRON SHD224514 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1172, REV. A HERMETIC POWER MOSFET N-CHANNEL FEATURES 100 Volt, 80A, 15 mili Ohm Isolated Hermetic Metal Package Fast intrinsic Rectifier Very Low RDS (on) Low package inductance-easy to drive and protect Similar Part Type - IXFD80N10 MAXIMUM RATINGS ALL RATINGS ARE AT T = 25 C UNLESS OTHERWISE SPEC... See More ⇒

Detailed specifications: IXFH18N60X , IXFH18N100Q3 , IXFH16N60P3 , IXFH16N50P3 , IXFH150N20T , IXFH14N60P3 , IXFH120N25T , IXFH10N100Q , IRF2807 , IXFC80N10 , IXFC80N08 , IXFB40N110Q3 , IXFB210N30P3 , IXFB150N65X2 , IXFA8N50P3 , IXFA7N60P3 , IXFA5N50P3 .

Keywords - IXFD80N10 MOSFET specs

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