All MOSFET. IXFC80N10 Datasheet

 

IXFC80N10 Datasheet and Replacement


   Type Designator: IXFC80N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 1675 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm
   Package: ISOPLUS-220
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IXFC80N10 Datasheet (PDF)

 ..1. Size:69K  ixys
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IXFC80N10

ADVANCE TECHNICAL INFORMATIONHiPerFETTM MOSFET IXFC 80N10 VDSS = 100 VISOPLUS220TM ID25 = 80 AElectrically Isolated Back Surface RDS(on) = 12.5 m trr 200 ns N-Channel Enhancement ModeHigh dv/dt, Low t , HDMOSTM FamilyrrSymbol Test Conditions Maximum RatingsISOPLUS 220TMVDSS TJ = 25C to 150C 100 VVDGR TJ = 25C to 150C;

 7.1. Size:525K  ixys
 ixfc80n08.pdf pdf_icon

IXFC80N10

ADVANCE TECHNICAL INFORMATIONVDSS ID25 RDS(on)HiPerFETTM MOSFETIXFC 80N08 80 V 80 A 11 mISOPLUS220TM85 V 80 A 11 mIXFC 80N085Electrically Isolated Back SurfaceN-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM FamilySymbol Test Conditions Maximum RatingsISOPLUS220TMVDSS TJ = 25C to 150C 80N08 80 VVDGR TJ = 25C to

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History: DE275X2-501N16A | 2SK162 | AS2341 | 25N10L-TF3-T | LSB55R066GT | NCEP6012AS | 1N65L-AA3-R

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