All MOSFET. IXFB40N110Q3 Datasheet

 

IXFB40N110Q3 Datasheet and Replacement


   Type Designator: IXFB40N110Q3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1560 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 984 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
   Package: PLUS264
 

 IXFB40N110Q3 substitution

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IXFB40N110Q3 Datasheet (PDF)

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IXFB40N110Q3

Preliminary Technical InformationHiperFETTM VDSS = 1100VIXFB40N110Q3Power MOSFET ID25 = 40A Q3-Class RDS(on) 260m N-Channel Enhancement ModeFast Intrinsic RectifierPLUS264TMSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1100 VGVDGR TJ = 25C to 150C, RGS = 1M 1100 VDSVGSS Continuous 30 VTabVGS

Datasheet: IXFH16N50P3 , IXFH150N20T , IXFH14N60P3 , IXFH120N25T , IXFH10N100Q , IXFD80N10 , IXFC80N10 , IXFC80N08 , 7N60 , IXFB210N30P3 , IXFB150N65X2 , IXFA8N50P3 , IXFA7N60P3 , IXFA5N50P3 , IXFA4N60P3 , IXFA36N30P3 , IXFA30N60X .

Keywords - IXFB40N110Q3 MOSFET datasheet

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