IXFB40N110Q3 PDF and Equivalents Search

 

IXFB40N110Q3 Specs and Replacement

Type Designator: IXFB40N110Q3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1560 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 68 nS

Cossⓘ - Output Capacitance: 984 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm

Package: PLUS264

IXFB40N110Q3 substitution

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IXFB40N110Q3 datasheet

 ..1. Size:137K  ixys
 ixfb40n110q3.pdf pdf_icon

IXFB40N110Q3

Preliminary Technical Information HiperFETTM VDSS = 1100V IXFB40N110Q3 Power MOSFET ID25 = 40A Q3-Class RDS(on) 260m N-Channel Enhancement Mode Fast Intrinsic Rectifier PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1100 V G VDGR TJ = 25 C to 150 C, RGS = 1M 1100 V D S VGSS Continuous 30 V Tab VGS... See More ⇒

Detailed specifications: IXFH16N50P3 , IXFH150N20T , IXFH14N60P3 , IXFH120N25T , IXFH10N100Q , IXFD80N10 , IXFC80N10 , IXFC80N08 , 2N60 , IXFB210N30P3 , IXFB150N65X2 , IXFA8N50P3 , IXFA7N60P3 , IXFA5N50P3 , IXFA4N60P3 , IXFA36N30P3 , IXFA30N60X .

Keywords - IXFB40N110Q3 MOSFET specs

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