All MOSFET. IXFB210N30P3 Datasheet

 

IXFB210N30P3 Datasheet and Replacement


   Type Designator: IXFB210N30P3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1890 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 210 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 2550 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0145 Ohm
   Package: PLUS264
 

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IXFB210N30P3 Datasheet (PDF)

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IXFB210N30P3

Advance Technical InformationPolar3TM HiPerFETTM VDSS = 300VIXFB210N30P3Power MOSFET ID25 = 210A RDS(on) 14.5m trr 250nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierPLUS264TMSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 300 VGVDGR TJ = 25C to 150C, RGS = 1M 300 VD

Datasheet: IXFH150N20T , IXFH14N60P3 , IXFH120N25T , IXFH10N100Q , IXFD80N10 , IXFC80N10 , IXFC80N08 , IXFB40N110Q3 , K2611 , IXFB150N65X2 , IXFA8N50P3 , IXFA7N60P3 , IXFA5N50P3 , IXFA4N60P3 , IXFA36N30P3 , IXFA30N60X , IXFA26N50P3 .

History: JMTC170N10A | 2SJ598-Z | 4N65Z | FQI70N08 | HN1L03FU | STP6NA60

Keywords - IXFB210N30P3 MOSFET datasheet

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