All MOSFET. IXFA4N60P3 Datasheet

 

IXFA4N60P3 Datasheet and Replacement


   Type Designator: IXFA4N60P3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 114 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 46 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: TO-263AA
 

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IXFA4N60P3 Datasheet (PDF)

 ..1. Size:163K  ixys
 ixfa4n60p3 ixfp4n60p3 ixfy4n60p3.pdf pdf_icon

IXFA4N60P3

Advance Technical InformationPolar3 TM HiPerFETTM VDSS = 600VIXFY4N60P3Power MOSFETs ID25 = 4AIXFA4N60P3 RDS(on) 2.2 IXFP4N60P3N-Channel Enhancement ModeAvalanche RatedTO-252 (IXFY)Fast Intrinsic RectifierGSD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 V TO-263 AA (IXFA)VDGR TJ = 25C to 150C, RG

 8.1. Size:142K  ixys
 ixfa4n100q-trl.pdf pdf_icon

IXFA4N60P3

HiperFETTM VDSS = 1000VIXFA4N100QPower MOSFETs ID25 = 4AIXFP4N100Q Q-Class RDS(on) 3.0 N-Channel Enhancement ModeAvalanche Rated TO-263 AA (IXFA)Fast Intrinsic DiodeGSSymbol Test Conditions Maximum RatingsD (Tab)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C, RGS = 1M 1000 VTO-220AB (IXFP)VGSS Continuous 20 VVGS

Datasheet: IXFC80N10 , IXFC80N08 , IXFB40N110Q3 , IXFB210N30P3 , IXFB150N65X2 , IXFA8N50P3 , IXFA7N60P3 , IXFA5N50P3 , IRFZ48N , IXFA36N30P3 , IXFA30N60X , IXFA26N50P3 , IXFA24N60X , IXFA22N65X2 , IXFA22N60P3 , IXFA20N50P3 , IXFA18N60X .

History: TMPF12N60 | FDD7N20TM

Keywords - IXFA4N60P3 MOSFET datasheet

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