IPU60R600C6 PDF and Equivalents Search

 

IPU60R600C6 Specs and Replacement


   Type Designator: IPU60R600C6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO-251
 

 IPU60R600C6 substitution

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IPU60R600C6 datasheet

 ..1. Size:1034K  infineon
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IPU60R600C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPU60R600C6 Data Sheet Rev. 2.1 Final Industrial & Multimarket 600V CoolMOS C6 Power Transistor IPU60R600C6 IPAK 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pionee... See More ⇒

 ..2. Size:599K  inchange semiconductor
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IPU60R600C6

isc N-Channel MOSFET Transistor IPU60R600C6 FEATURES Drain Source Voltage- V = 600V(Min) DSS Low On-Resistance R = 600m (Max) DS(on) 100% Avalanche Tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE ... See More ⇒

 8.1. Size:2232K  infineon
ipd60r2k1ce ipu60r2k1ce.pdf pdf_icon

IPU60R600C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 600V CoolMOS CE Power Transistor IPx60R2K1CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS CE Power Transistor IPD60R2K1CE, IPU60R2K1CE DPAK IPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio... See More ⇒

 8.2. Size:2314K  infineon
ipd60r1k0ce ipu60r1k0ce.pdf pdf_icon

IPU60R600C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 600V CoolMOS CE Power Transistor IPx60R1K0CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS CE Power Transistor IPD60R1K0CE, IPU60R1K0CE DPAK IPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio... See More ⇒

Detailed specifications: IPW60R041P6 , IPW60R040C7 , IPW50R280CE , IPW50R190CE , IPU80R2K8CE , IPU80R1K4CE , IPU80R1K0CE , IPU60R950C6 , K3569 , IPU60R2K1CE , IPU60R2K0C6 , IPU60R1K5CE , IPU60R1K4C6 , IPU60R1K0CE , IPU50R950CE , IPU50R3K0CE , IPU50R2K0CE .

Keywords - IPU60R600C6 MOSFET specs

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