IPU60R600C6 Specs and Replacement
Type Designator: IPU60R600C6
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 63
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 7.3
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Electrical Characteristics
tr ⓘ - Rise Time: 9
nS
Cossⓘ -
Output Capacitance: 30
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6
Ohm
Package:
TO-251
-
MOSFET ⓘ Cross-Reference Search
IPU60R600C6 datasheet
..1. Size:1034K infineon
ipu60r600c6.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPU60R600C6 Data Sheet Rev. 2.1 Final Industrial & Multimarket 600V CoolMOS C6 Power Transistor IPU60R600C6 IPAK 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pionee... See More ⇒
..2. Size:599K inchange semiconductor
ipu60r600c6.pdf 
isc N-Channel MOSFET Transistor IPU60R600C6 FEATURES Drain Source Voltage- V = 600V(Min) DSS Low On-Resistance R = 600m (Max) DS(on) 100% Avalanche Tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE ... See More ⇒
8.1. Size:2232K infineon
ipd60r2k1ce ipu60r2k1ce.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 600V CoolMOS CE Power Transistor IPx60R2K1CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS CE Power Transistor IPD60R2K1CE, IPU60R2K1CE DPAK IPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio... See More ⇒
8.2. Size:2314K infineon
ipd60r1k0ce ipu60r1k0ce.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 600V CoolMOS CE Power Transistor IPx60R1K0CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS CE Power Transistor IPD60R1K0CE, IPU60R1K0CE DPAK IPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio... See More ⇒
8.3. Size:2307K infineon
ipd60r1k5ce ipu60r1k5ce.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 600V CoolMOS CE Power Transistor IPx60R1K5CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS CE Power Transistor IPD60R1K5CE, IPU60R1K5CE DPAK IPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio... See More ⇒
8.4. Size:1048K infineon
ipu60r950c6.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPU60R950C6 Data Sheet Rev. 2.1 Final Industrial & Multimarket 600V CoolMOS C6 Power Transistor IPU60R950C6 IPAK 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneer... See More ⇒
8.5. Size:1052K infineon
ipu60r2k0c6.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPU60R2K0C6 Data Sheet Rev. 2.1 Final Industrial & Multimarket 600V CoolMOS C6 Power Transistor IPU60R2K0C6 IPAK 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneer... See More ⇒
8.6. Size:1053K infineon
ipu60r1k4c6.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPU60R1K4C6 Data Sheet Rev. 2.0 Final Industrial & Multimarket 600V CoolMOS C6 Power Transistor IPU60R1K4C6 IPAK 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneer... See More ⇒
8.7. Size:1375K infineon
ipd60r3k4ce ipu60r3k4ce ips60r3k4ce.pdf 
IPD60R3K4CE, IPU60R3K4CE, IPS60R3K4CE MOSFET DPAK IPAK IPAK SL 600V CoolMOS CE Power Transistor tab tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 1 2 3 3 price-performance optimized platform enabling to target cost sensitive a... See More ⇒
8.8. Size:261K inchange semiconductor
ipu60r950c6.pdf 
isc N-Channel MOSFET Transistor IPU60R950C6 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE... See More ⇒
8.9. Size:261K inchange semiconductor
ipu60r2k0c6.pdf 
isc N-Channel MOSFET Transistor IPU60R2K0C6 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE... See More ⇒
8.10. Size:261K inchange semiconductor
ipu60r1k4c6.pdf 
isc N-Channel MOSFET Transistor IPU60R1K4C6 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE... See More ⇒
8.11. Size:261K inchange semiconductor
ipu60r1k0ce.pdf 
isc N-Channel MOSFET Transistor IPU60R1K0CE FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE... See More ⇒
8.12. Size:261K inchange semiconductor
ipu60r3k4ce.pdf 
isc N-Channel MOSFET Transistor IPU60R3K4CE FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE... See More ⇒
8.13. Size:261K inchange semiconductor
ipu60r2k1ce.pdf 
isc N-Channel MOSFET Transistor IPU60R2K1CE FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE... See More ⇒
8.14. Size:261K inchange semiconductor
ipu60r1k5ce.pdf 
isc N-Channel MOSFET Transistor IPU60R1K5CE FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE... See More ⇒
Detailed specifications: IPW60R041P6
, IPW60R040C7
, IPW50R280CE
, IPW50R190CE
, IPU80R2K8CE
, IPU80R1K4CE
, IPU80R1K0CE
, IPU60R950C6
, K3569
, IPU60R2K1CE
, IPU60R2K0C6
, IPU60R1K5CE
, IPU60R1K4C6
, IPU60R1K0CE
, IPU50R950CE
, IPU50R3K0CE
, IPU50R2K0CE
.
Keywords - IPU60R600C6 MOSFET specs
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