IPU60R600C6 Datasheet. Specs and Replacement
Type Designator: IPU60R600C6 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 30 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO-251
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IPU60R600C6 datasheet
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ipu60r600c6.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPU60R600C6 Data Sheet Rev. 2.1 Final Industrial & Multimarket 600V CoolMOS C6 Power Transistor IPU60R600C6 IPAK 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pionee... See More ⇒
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ipu60r600c6.pdf
isc N-Channel MOSFET Transistor IPU60R600C6 FEATURES Drain Source Voltage- V = 600V(Min) DSS Low On-Resistance R = 600m (Max) DS(on) 100% Avalanche Tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE ... See More ⇒
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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 600V CoolMOS CE Power Transistor IPx60R2K1CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS CE Power Transistor IPD60R2K1CE, IPU60R2K1CE DPAK IPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio... See More ⇒
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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 600V CoolMOS CE Power Transistor IPx60R1K0CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS CE Power Transistor IPD60R1K0CE, IPU60R1K0CE DPAK IPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio... See More ⇒
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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 600V CoolMOS CE Power Transistor IPx60R1K5CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS CE Power Transistor IPD60R1K5CE, IPU60R1K5CE DPAK IPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio... See More ⇒
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ipu60r950c6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPU60R950C6 Data Sheet Rev. 2.1 Final Industrial & Multimarket 600V CoolMOS C6 Power Transistor IPU60R950C6 IPAK 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneer... See More ⇒
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ipu60r2k0c6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPU60R2K0C6 Data Sheet Rev. 2.1 Final Industrial & Multimarket 600V CoolMOS C6 Power Transistor IPU60R2K0C6 IPAK 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneer... See More ⇒
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ipu60r1k4c6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPU60R1K4C6 Data Sheet Rev. 2.0 Final Industrial & Multimarket 600V CoolMOS C6 Power Transistor IPU60R1K4C6 IPAK 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneer... See More ⇒
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IPD60R3K4CE, IPU60R3K4CE, IPS60R3K4CE MOSFET DPAK IPAK IPAK SL 600V CoolMOS CE Power Transistor tab tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 1 2 3 3 price-performance optimized platform enabling to target cost sensitive a... See More ⇒
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ipu60r950c6.pdf
isc N-Channel MOSFET Transistor IPU60R950C6 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE... See More ⇒
8.9. Size:261K inchange semiconductor
ipu60r2k0c6.pdf
isc N-Channel MOSFET Transistor IPU60R2K0C6 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE... See More ⇒
8.10. Size:261K inchange semiconductor
ipu60r1k4c6.pdf
isc N-Channel MOSFET Transistor IPU60R1K4C6 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE... See More ⇒
8.11. Size:261K inchange semiconductor
ipu60r1k0ce.pdf
isc N-Channel MOSFET Transistor IPU60R1K0CE FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE... See More ⇒
8.12. Size:261K inchange semiconductor
ipu60r3k4ce.pdf
isc N-Channel MOSFET Transistor IPU60R3K4CE FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE... See More ⇒
8.13. Size:261K inchange semiconductor
ipu60r2k1ce.pdf
isc N-Channel MOSFET Transistor IPU60R2K1CE FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE... See More ⇒
8.14. Size:261K inchange semiconductor
ipu60r1k5ce.pdf
isc N-Channel MOSFET Transistor IPU60R1K5CE FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE... See More ⇒
Detailed specifications: IPW60R041P6, IPW60R040C7, IPW50R280CE, IPW50R190CE, IPU80R2K8CE, IPU80R1K4CE, IPU80R1K0CE, IPU60R950C6, 2SK3568, IPU60R2K1CE, IPU60R2K0C6, IPU60R1K5CE, IPU60R1K4C6, IPU60R1K0CE, IPU50R950CE, IPU50R3K0CE, IPU50R2K0CE
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