IPT059N15N3 Specs and Replacement

Type Designator: IPT059N15N3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 375 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 155 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 630 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm

Package: HSOF-8-1

IPT059N15N3 substitution

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IPT059N15N3 datasheet

 ..1. Size:1199K  infineon
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IPT059N15N3

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 3 Power-Transistor, 150 V IPT059N15N3 Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOS 3 Power-Transistor, 150 V IPT059N15N3 HSOF 1 Description Features Tab N-channel, normal level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) 1 175 ... See More ⇒

Detailed specifications: IPU60R1K4C6, IPU60R1K0CE, IPU50R950CE, IPU50R3K0CE, IPU50R2K0CE, IPU50R1K4CE, IPU13N03LAG, IPU06N03LAG, AON6380, IPT020N10N3, IPT015N10N5, IPT012N08N5, IPT007N06N, IPT004N03L, IPS65R950C6, IPS65R1K5CE, IPS65R1K4C6

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