All MOSFET. IPT059N15N3 Datasheet

 

IPT059N15N3 Datasheet and Replacement


   Type Designator: IPT059N15N3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 155 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 630 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm
   Package: HSOF-8-1
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IPT059N15N3 Datasheet (PDF)

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IPT059N15N3

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS3 Power-Transistor, 150 VIPT059N15N3Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOS3 Power-Transistor, 150 VIPT059N15N3HSOF1 DescriptionFeaturesTab N-channel, normal level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)1 175

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SML120L16 | 4N65KL-T2Q-R | HAT2043R | TK3A60DA | KHB6D0N40P | IXFE48N50Q | IRF1405ZS

Keywords - IPT059N15N3 MOSFET datasheet

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