IPT007N06N Specs and Replacement

Type Designator: IPT007N06N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 375 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 300 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 3400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00075 Ohm

Package: HSOF-8-1

IPT007N06N substitution

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IPT007N06N datasheet

 ..1. Size:1194K  infineon
 ipt007n06n.pdf pdf_icon

IPT007N06N

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-Transistor, 60 V IPT007N06N Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOSTM Power-Transistor, 60 V IPT007N06N HSOF 1 Description Features Tab 100% avalanche tested Superior thermal resistance N-channel 1 Qualified according to JEDEC 1) for target applications... See More ⇒

 9.1. Size:1208K  infineon
 ipt004n03l.pdf pdf_icon

IPT007N06N

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-MOSFET, 30 V IPT004N03L Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM Power-MOSFET, 30 V IPT004N03L HSOF 1 Description Features Tab Optimized for e-fuse and ORing application Very low on-resistance R @ V =4.5 V DS(on) GS 100% avalanche tested 1 Superior th... See More ⇒

Detailed specifications: IPU50R2K0CE, IPU50R1K4CE, IPU13N03LAG, IPU06N03LAG, IPT059N15N3, IPT020N10N3, IPT015N10N5, IPT012N08N5, AON7506, IPT004N03L, IPS65R950C6, IPS65R1K5CE, IPS65R1K4C6, IPS65R1K0CE, IPS090N03L, IPS075N03L, IPS060N03L

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