All MOSFET. IPT007N06N Datasheet

 

IPT007N06N MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPT007N06N
   Marking Code: 007N06N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.3 V
   |Id|ⓘ - Maximum Drain Current: 300 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 216 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 3400 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00075 Ohm
   Package: HSOF-8-1

 IPT007N06N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPT007N06N Datasheet (PDF)

 ..1. Size:1194K  infineon
 ipt007n06n.pdf

IPT007N06N IPT007N06N

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM Power-Transistor, 60 VIPT007N06NData SheetRev. 2.1FinalPower Management & MultimarketOptiMOSTM Power-Transistor, 60 VIPT007N06NHSOF1 DescriptionFeaturesTab 100% avalanche tested Superior thermal resistance N-channel1 Qualified according to JEDEC 1) for target applications

 9.1. Size:1208K  infineon
 ipt004n03l.pdf

IPT007N06N IPT007N06N

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM Power-MOSFET, 30 VIPT004N03LData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM Power-MOSFET, 30 VIPT004N03LHSOF1 DescriptionFeaturesTab Optimized for e-fuse and ORing application Very low on-resistance R @ V =4.5 VDS(on) GS 100% avalanche tested1 Superior th

Datasheet: IPU50R2K0CE , IPU50R1K4CE , IPU13N03LAG , IPU06N03LAG , IPT059N15N3 , IPT020N10N3 , IPT015N10N5 , IPT012N08N5 , IRFZ24N , IPT004N03L , IPS65R950C6 , IPS65R1K5CE , IPS65R1K4C6 , IPS65R1K0CE , IPS090N03L , IPS075N03L , IPS060N03L .

History: BL2N50-A | IRFS353

 

 
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