All MOSFET. IPP410N30N Datasheet

 

IPP410N30N MOSFET. Datasheet pdf. Equivalent

Type Designator: IPP410N30N

Marking Code: 410N30N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 300 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 44 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 9 nS

Drain-Source Capacitance (Cd): 374 pF

Maximum Drain-Source On-State Resistance (Rds): 0.041 Ohm

Package: TO-220

IPP410N30N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPP410N30N Datasheet (PDF)

1.1. ipp410n30n.pdf Size:1804K _infineon

IPP410N30N
IPP410N30N

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-Transistor, 300 V IPP410N30N Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM Power-Transistor, 300 V IPP410N30N TO-220-3 1 Description tab Features • N-channel, normal level • Fast Diode with reduced Q rr • Optimized for hard commutation ruggedness • Very low on-resi

1.2. ipp410n30n.pdf Size:244K _inchange_semiconductor

IPP410N30N
IPP410N30N

isc N-Channel MOSFET Transistor IPP410N30N,IIPP410N30N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤41mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Optimized for hard commutation ruggedness ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMET

 

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