All MOSFET. IPP410N30N Datasheet

 

IPP410N30N Datasheet and Replacement


   Type Designator: IPP410N30N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 44 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 374 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
   Package: TO-220
 

 IPP410N30N substitution

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IPP410N30N Datasheet (PDF)

 ..1. Size:1804K  infineon
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IPP410N30N

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM Power-Transistor, 300 VIPP410N30NData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM Power-Transistor, 300 VIPP410N30NTO-220-31 DescriptiontabFeatures N-channel, normal level Fast Diode with reduced Qrr Optimized for hard commutation ruggedness Very low on-resi

 ..2. Size:244K  inchange semiconductor
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IPP410N30N

isc N-Channel MOSFET Transistor IPP410N30NIIPP410N30NFEATURESStatic drain-source on-resistance:RDS(on) 41mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONOptimized for hard commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

Datasheet: IPP60R125P6 , IPP60R099P6 , IPP60R099C7 , IPP60R074C6 , IPP60R040C7 , IPP50R500CE , IPP50R280CE , IPP50R190CE , IRF740 , IPP25N06S3-25 , IPP220N25NFD , IPP14N03LA , IPP147N03L , IPP120N20NFD , IPP110N20NA , IPP100N06S3L-04 , IPP100N06S3L-03 .

History: JMTP3008A | H12N60E

Keywords - IPP410N30N MOSFET datasheet

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