All MOSFET. IPP410N30N Datasheet

 

IPP410N30N MOSFET. Datasheet pdf. Equivalent

Type Designator: IPP410N30N

Marking Code: 410N30N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 300 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 44 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 9 nS

Drain-Source Capacitance (Cd): 374 pF

Maximum Drain-Source On-State Resistance (Rds): 0.041 Ohm

Package: TO-220

IPP410N30N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPP410N30N Datasheet (PDF)

1.1. ipp410n30n.pdf Size:1804K _infineon

IPP410N30N
IPP410N30N

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-Transistor, 300 V IPP410N30N Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM Power-Transistor, 300 V IPP410N30N TO-220-3 1 Description tab Features • N-channel, normal level • Fast Diode with reduced Q rr • Optimized for hard commutation ruggedness • Very low on-resi

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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