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IPP410N30N Spec and Replacement


   Type Designator: IPP410N30N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 44 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 374 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
   Package: TO-220

 IPP410N30N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPP410N30N Specs

 ..1. Size:1804K  infineon
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IPP410N30N

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-Transistor, 300 V IPP410N30N Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM Power-Transistor, 300 V IPP410N30N TO-220-3 1 Description tab Features N-channel, normal level Fast Diode with reduced Q rr Optimized for hard commutation ruggedness Very low on-resi... See More ⇒

 ..2. Size:244K  inchange semiconductor
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IPP410N30N

isc N-Channel MOSFET Transistor IPP410N30N IIPP410N30N FEATURES Static drain-source on-resistance RDS(on) 41m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Optimized for hard commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET... See More ⇒

Detailed specifications: IPP60R125P6 , IPP60R099P6 , IPP60R099C7 , IPP60R074C6 , IPP60R040C7 , IPP50R500CE , IPP50R280CE , IPP50R190CE , IRF740 , IPP25N06S3-25 , IPP220N25NFD , IPP14N03LA , IPP147N03L , IPP120N20NFD , IPP110N20NA , IPP100N06S3L-04 , IPP100N06S3L-03 .

History: PDB1216E | IPP530N15N3G | AP13P15GS

Keywords - IPP410N30N MOSFET specs

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