All MOSFET. IPP25N06S3-25 Datasheet

 

IPP25N06S3-25 Datasheet and Replacement


   Type Designator: IPP25N06S3-25
   Marking Code: 3N0625
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 283 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0248 Ohm
   Package: TO-220
 

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IPP25N06S3-25 Datasheet (PDF)

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IPP25N06S3-25

IPB25N06S3-25IPI25N06S3-25, IPP25N06S3-25OptiMOS-T2 Power-TransistorProduct SummaryV 55 VDSR (SMD version) 24.8mDS(on),maxI 25 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanch

Datasheet: IPP60R099P6 , IPP60R099C7 , IPP60R074C6 , IPP60R040C7 , IPP50R500CE , IPP50R280CE , IPP50R190CE , IPP410N30N , IRF840 , IPP220N25NFD , IPP14N03LA , IPP147N03L , IPP120N20NFD , IPP110N20NA , IPP100N06S3L-04 , IPP100N06S3L-03 , IPP09N03LA .

History: FMD5N50E5

Keywords - IPP25N06S3-25 MOSFET datasheet

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