All MOSFET. IRFP433 Datasheet

 

IRFP433 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFP433

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 450 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 2 Ohm

Package: TO3P

IRFP433 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP433 Datasheet (PDF)

1.1. irfp4332pbf.pdf Size:298K _upd-mosfet

IRFP433
IRFP433

PD - 97100B IRFP4332PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS min 250 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 V l Low EPULSE Rating to Reduce Power m RDS(ON) typ. @ 10V 29 Dissipation in PDP Sustain, Energy Recovery TJ max 175 °C and Pass Switch Applications l Low QG for

1.2. irfp4332pbf.pdf Size:298K _international_rectifier

IRFP433
IRFP433

PD - 97100B IRFP4332PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS min 250 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 V l Low EPULSE Rating to Reduce Power m RDS(ON) typ. @ 10V 29 Dissipation in PDP Sustain, Energy Recovery TJ max 175 °C and Pass Switch Applications l Low QG for

 1.3. irfp4332.pdf Size:242K _inchange_semiconductor

IRFP433
IRFP433

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4332,IIRFP4332 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤33mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Repetitive Peak Current Capability for Reliable Operation ·Short fall & Rise Times For Fast Swi

Datasheet: IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP260 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A .

 

 
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