IRFP433 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFP433
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 21 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 86 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO3P
IRFP433 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFP433 Datasheet (PDF)
irfp4332pbf.pdf
PD - 97100BIRFP4332PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS min 250 Vl Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 Vl Low EPULSE Rating to Reduce PowermRDS(ON) typ. @ 10V 29 Dissipation in PDP Sustain, Energy RecoveryTJ max 175 C and Pass Switch Applicationsl Low QG for
irfp4332pbf.pdf
PD - 97100BIRFP4332PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS min 250 Vl Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 Vl Low EPULSE Rating to Reduce PowermRDS(ON) typ. @ 10V 29 Dissipation in PDP Sustain, Energy RecoveryTJ max 175 C and Pass Switch Applicationsl Low QG for
irfp4332.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP4332IIRFP4332FEATURESStatic drain-source on-resistance:RDS(on)33mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Repetitive Peak Current Capability for Reliable OperationShort fall & Rise Times For Fast Swi
Datasheet: IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , 5N60 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A .
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