All MOSFET. IPI65R280E6 Datasheet

 

IPI65R280E6 Datasheet and Replacement


   Type Designator: IPI65R280E6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO-262
 

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IPI65R280E6 Datasheet (PDF)

 ..1. Size:2033K  infineon
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IPI65R280E6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6650V CoolMOS E6 Power TransistorIPx65R280E6 Data SheetRev. 2.0, 2010-04-26Final Industrial & Multimarket650V CoolMOS E6 Power Transistor IPA65R280E6, IPB65R280E6IPI65R280E6, IPP65R280E6IPW65R280E61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

 ..2. Size:286K  inchange semiconductor
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IPI65R280E6

isc N-Channel MOSFET Transistor IPI65R280E6FEATURESStatic drain-source on-resistance:RDS(on) 0.28Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while notsacrificing ease of useABSOLUTE MAXIMUM RAT

 5.1. Size:1337K  infineon
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IPI65R280E6

MO Met l Oxi e emi n t iel e t n i t C lMO C665 C lMO C6 e n i t I x65 280C6D t eetRev. 2.1 in l e M n ement & M ltim ket , ==:$&)G '=D3?*?/

 5.2. Size:2104K  infineon
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IPI65R280E6

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History: WMS175N10LG4 | SMM2348ES | RCD060N25

Keywords - IPI65R280E6 MOSFET datasheet

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