IPI65R280E6 Specs and Replacement

Type Designator: IPI65R280E6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm

Package: TO-262

IPI65R280E6 substitution

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IPI65R280E6 datasheet

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IPI65R280E6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R280E6 Data Sheet Rev. 2.0, 2010-04-26 Final Industrial & Multimarket 650V CoolMOS E6 Power Transistor IPA65R280E6, IPB65R280E6 IPI65R280E6, IPP65R280E6 IPW65R280E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi... See More ⇒

 ..2. Size:286K  inchange semiconductor
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IPI65R280E6

isc N-Channel MOSFET Transistor IPI65R280E6 FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ABSOLUTE MAXIMUM RAT... See More ⇒

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IPI65R280E6

MO Met l Oxi e emi n t iel e t n i t C lMO C6 65 C lMO C6 e n i t I x65 280C6 D t eet Rev. 2.1 in l e M n ement & M ltim ket , == $&)G '=D3? *?/... See More ⇒

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IPI65R280E6

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Detailed specifications: IPL60R2K1C6S, IPL60R255P6, IPL60R210P6, IPL60R1K5C6S, IPL60R180P6, IPI80N06S3-07, IPI65R420CFD, IPI65R310CFD, P60NF06, IPI65R190E6, IPI65R190CFD, IPI65R190C6, IPI65R150CFD, IPI65R110CFD, IPI65R099C6, IPI14N03LA, IPI12CN10NG

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.