MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6650V CoolMOS E6 Power TransistorIPx65R280E6 Data SheetRev. 2.0, 2010-04-26Final Industrial & Multimarket650V CoolMOS E6 Power Transistor IPA65R280E6, IPB65R280E6IPI65R280E6, IPP65R280E6IPW65R280E61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

isc N-Channel MOSFET Transistor IPI65R280E6FEATURESStatic drain-source on-resistance:RDS(on) 0.28Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while notsacrificing ease of useABSOLUTE MAXIMUM RAT

MO Met l Oxi e emi n t iel e t n i t C lMO C665 C lMO C6 e n i t I x65 280C6D t eetRev. 2.1 in l e M n ement & M ltim ket , ==:$&)G '=D3?*?/

MOSFET+

isc N-Channel MOSFET Transistor IPI65R280C6FEATURESStatic drain-source on-resistance:RDS(on) 0.28Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while notsacrificing ease of useABSOLUTE MAXIMUM RAT