IPI09N03LA Specs and Replacement

Type Designator: IPI09N03LA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 63 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 88 nS

Cossⓘ - Output Capacitance: 530 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0089 Ohm

Package: TO-262

IPI09N03LA substitution

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IPI09N03LA datasheet

 ..1. Size:311K  infineon
 ipb09n03la ipi09n03la ipp09n03la.pdf pdf_icon

IPI09N03LA

IPB09N03LA IPI09N03LA, IPP09N03LA OptiMOS 2 Power-Transistor Product Summary Features V 25 V DS Ideal for high-frequency dc/dc converters R (SMD version) 8.9 m DS(on),max N-channel I 50 A D Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Superior thermal resistance 1... See More ⇒

Detailed specifications: IPI65R190CFD, IPI65R190C6, IPI65R150CFD, IPI65R110CFD, IPI65R099C6, IPI14N03LA, IPI12CN10NG, IPI100N06S3L-04, IRLB3034, IPI084N06L3G, IPI04N03LA, IPI04CN10N, IPI029N06N, IPI020N06N, IPF13N03LAG, IPF135N03LG, IPF050N03LG

Keywords - IPI09N03LA MOSFET specs

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