All MOSFET. IPI09N03LA Datasheet

 

IPI09N03LA Datasheet and Replacement


   Type Designator: IPI09N03LA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 88 nS
   Cossⓘ - Output Capacitance: 530 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0089 Ohm
   Package: TO-262
 

 IPI09N03LA substitution

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IPI09N03LA Datasheet (PDF)

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IPI09N03LA

IPB09N03LAIPI09N03LA, IPP09N03LAOptiMOS2 Power-TransistorProduct SummaryFeaturesV 25 VDS Ideal for high-frequency dc/dc convertersR (SMD version) 8.9m DS(on),max N-channelI 50 AD Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Superior thermal resistance 1

Datasheet: IPI65R190CFD , IPI65R190C6 , IPI65R150CFD , IPI65R110CFD , IPI65R099C6 , IPI14N03LA , IPI12CN10NG , IPI100N06S3L-04 , 60N06 , IPI084N06L3G , IPI04N03LA , IPI04CN10N , IPI029N06N , IPI020N06N , IPF13N03LAG , IPF135N03LG , IPF050N03LG .

History: FDI8441 | NCE30H12

Keywords - IPI09N03LA MOSFET datasheet

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