IPDH4N03LAG Specs and Replacement

Type Designator: IPDH4N03LAG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 94 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 920 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm

Package: TO-252

IPDH4N03LAG substitution

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IPDH4N03LAG datasheet

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IPDH4N03LAG

IPDH4N03LA G IPSH4N03LA G OptiMOS 2 Power-Transistor Product Summary Features V 25 V DS Ideal for high-frequency dc/dc converters R (SMD Version) 4.2 m DS(on),max Qualified according to JEDEC1) for target applications I 90 A D N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Superior thermal resistance 175 C operating temperatu... See More ⇒

Detailed specifications: IPI04N03LA, IPI04CN10N, IPI029N06N, IPI020N06N, IPF13N03LAG, IPF135N03LG, IPF050N03LG, IPDH6N03LAG, 60N06, IPD80R2K8CE, IPD80R1K4CE, IPD80R1K0CE, IPD65R950CFD, IPD65R950C6, IPD65R660CFDA, IPD65R420CFDA, IPD65R420CFD

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.