All MOSFET. IPB65R310CFD Datasheet

 

IPB65R310CFD MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPB65R310CFD
   Marking Code: 65F6310
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 104.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 11.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 7.5 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm
   Package: TO-263

 IPB65R310CFD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPB65R310CFD Datasheet (PDF)

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 ipa65r310cfd ipb65r310cfd ipi65r310cfd ipp65r310cfd ipw65r310cfd ipw65r310cfd ipb65r310cfd ipp65r310cfd ipa65r310cfd ipi65r310cfd.pdf

IPB65R310CFD IPB65R310CFD

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPx65R310CFD Data SheetRev. 2.3FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R310CFD , IPB65R310CFD , IPP65R310CFDIPA65R310CFD , IPI65R310CFDTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage

 ..2. Size:258K  inchange semiconductor
 ipb65r310cfd.pdf

IPB65R310CFD IPB65R310CFD

Isc N-Channel MOSFET Transistor IPB65R310CFDFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

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 ipb65r310cfda ipp65r310cfda.pdf

IPB65R310CFD IPB65R310CFD

MOSFETMetal Oxide Semiconductor Field Effect TransistorCFDA Automotive650V CoolMOS CFDA Power TransistorIPx65R310CFDA Data SheetRev. 2.0FinalAutomotive650V CoolMOS CFDA Power TransistorIPB65R310CFDA, IPP65R310CFDADPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) princi

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 ipb65r380c6.pdf

IPB65R310CFD IPB65R310CFD

MOSFET+ =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R380C61 Descriptin!GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J+ - 1$#2K

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 ipd65r380c6 ipi65r380c6 ipb65r380c6 ipp65r380c6 ipa65r380c6.pdf

IPB65R310CFD IPB65R310CFD

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6650V CoolMOS C6 Power TransistorIPx65R380C6 Data SheetRev. 2.1, 2011-02-17Rev. 2.2, 2013-07-31Final Industrial & Multimarket650V CoolMOS C6 Power Transistor IPD65R380C6, IPI65R380C6IPB65R380C6, IPP65R380C6IPA65R380C61 DescriptionCoolMOS is a revolutionary technology for high voltage power MO

 7.3. Size:258K  inchange semiconductor
 ipb65r380c6.pdf

IPB65R310CFD IPB65R310CFD

Isc N-Channel MOSFET Transistor IPB65R380C6FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: NCEP048N85D | SDF460JEC

 

 
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