IPB042N10N3GE8187 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPB042N10N3GE8187
Marking Code: 042N10N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 100 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 117 nC
trⓘ - Rise Time: 59 nS
Cossⓘ - Output Capacitance: 1210 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
Package: TO-263
IPB042N10N3GE8187 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPB042N10N3GE8187 Datasheet (PDF)
ipb042n10n3-g ipi045n10n3-g ipp045n10n3-g ipb042n10n3ge8187.pdf
IPB042N10N3 G IPI045N10N3 GIPP045N10N3 G3 Power-TransistorProduct SummaryFeaturesV 1 D Q ' 381>>5?B=1
ipb042n10n3g.pdf
IPB042N10N3 GMOSFETDPAKOptiMOS3 Power-Transistor, 100 VFeatures N-channel, normal level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency switching and synchronous rectifica
ipb042n10n3g.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPB042N10N3GFEATURESWith TO-263(D2PAK) packagingUltra-fast body diodeHigh speed switchingVery low on-resistenceEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IRL520PBF | IRLU024NPBF | FDPF20N50
History: IRL520PBF | IRLU024NPBF | FDPF20N50
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