All MOSFET. IPB042N10N3GE8187 Datasheet

 

IPB042N10N3GE8187 Datasheet and Replacement


   Type Designator: IPB042N10N3GE8187
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 59 nS
   Cossⓘ - Output Capacitance: 1210 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: TO-263
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IPB042N10N3GE8187 Datasheet (PDF)

 0.1. Size:746K  infineon
 ipb042n10n3-g ipi045n10n3-g ipp045n10n3-g ipb042n10n3ge8187.pdf pdf_icon

IPB042N10N3GE8187

IPB042N10N3 G IPI045N10N3 GIPP045N10N3 G3 Power-TransistorProduct SummaryFeaturesV 1 D Q ' 381>>5?B=1

 2.1. Size:976K  infineon
 ipb042n10n3g.pdf pdf_icon

IPB042N10N3GE8187

IPB042N10N3 GMOSFETDPAKOptiMOS3 Power-Transistor, 100 VFeatures N-channel, normal level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency switching and synchronous rectifica

 2.2. Size:204K  inchange semiconductor
 ipb042n10n3g.pdf pdf_icon

IPB042N10N3GE8187

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPB042N10N3GFEATURESWith TO-263(D2PAK) packagingUltra-fast body diodeHigh speed switchingVery low on-resistenceEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IPB22N03S4L-15 | 2SK3700 | LSC65R280HT

Keywords - IPB042N10N3GE8187 MOSFET datasheet

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