IPB042N10N3GE8187 - параметры транзистора MOSFET, его аналоги, datasheet

IPB042N10N3GE8187 Datasheet (PDF)

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IPB042N10N3 G IPI045N10N3 GIPP045N10N3 G3 Power-TransistorProduct SummaryFeaturesV 1 D Q ' 381>>5?B=1

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IPB042N10N3 GMOSFETDPAKOptiMOS3 Power-Transistor, 100 VFeatures N-channel, normal level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency switching and synchronous rectifica

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INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPB042N10N3GFEATURESWith TO-263(D2PAK) packagingUltra-fast body diodeHigh speed switchingVery low on-resistenceEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

Другие MOSFET... IPB05N03LBG , IPB05N03LA , IPB057N06N , IPB055N03L , IPB04N03LAT , IPB04N03LA , IPB04CN10NG , IPB049N08N5 , 8N60 , IPB042N03L , IPB03N03LBG , IPB039N10N3GE8187 , IPB034N03L , IPB031N08N5 , IPB029N06N3GE8187 , IPB027N10N5 , IPB026N06N .