All MOSFET. IPB017N10N5 Datasheet

 

IPB017N10N5 Datasheet and Replacement


   Type Designator: IPB017N10N5
   Marking Code: 017N10N5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.8 V
   |Id|ⓘ - Maximum Drain Current: 180 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 168 nC
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 1810 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm
   Package: TO-263
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IPB017N10N5 Datasheet (PDF)

 ..1. Size:2346K  infineon
 ipb017n10n5.pdf pdf_icon

IPB017N10N5

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS 5 Power-Transistor, 100 VIPB017N10N5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOS 5 Power-Transistor, 100 VIPB017N10N5D-PAK 7pin1 DescriptionFeatures Ideal for high frequency switching and sync. rec.tab Excellent gate charge x R product (FOM)DS(on) Very low

 0.1. Size:1097K  infineon
 ipb017n10n5lf.pdf pdf_icon

IPB017N10N5

IPB017N10N5LFMOSFETD-PAK 7pinOptiMOSTM 5 Linear FET, 100 VFeatures Ideal for hot-swap and e-fuse applicationstab Very low on-resistance RDS(on) Wide safe operating area SOA N-channel, normal level1 100% avalanche tested Pb-free plating; RoHS compliant7 Qualified according to JEDEC1) for target applications Halogen-free according to IEC61

 7.1. Size:1149K  infineon
 ipb017n08n5.pdf pdf_icon

IPB017N10N5

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS5 Power-Transistor, 80 VIPB017N08N5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOS5 Power-Transistor, 80 VIPB017N08N5DPAK1 DescriptionFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance R

 7.2. Size:661K  infineon
 ipb017n06n3 ipb017n06n3g.pdf pdf_icon

IPB017N10N5

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History: NCE5015S

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