IPB017N08N5 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPB017N08N5
Marking Code: 017N08N5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.8 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 178 nC
trⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 2000 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm
Package: TO-263
IPB017N08N5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPB017N08N5 Datasheet (PDF)
ipb017n08n5.pdf
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ipb017n10n5.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS 5 Power-Transistor, 100 VIPB017N10N5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOS 5 Power-Transistor, 100 VIPB017N10N5D-PAK 7pin1 DescriptionFeatures Ideal for high frequency switching and sync. rec.tab Excellent gate charge x R product (FOM)DS(on) Very low
ipb017n10n5lf.pdf
IPB017N10N5LFMOSFETD-PAK 7pinOptiMOSTM 5 Linear FET, 100 VFeatures Ideal for hot-swap and e-fuse applicationstab Very low on-resistance RDS(on) Wide safe operating area SOA N-channel, normal level1 100% avalanche tested Pb-free plating; RoHS compliant7 Qualified according to JEDEC1) for target applications Halogen-free according to IEC61
Datasheet: IPB031N08N5 , IPB029N06N3GE8187 , IPB027N10N5 , IPB026N06N , IPB024N08N5 , IPB020N10N5 , IPB020N08N5 , IPB017N10N5 , IRF3205 , IPB015N08N5 , IPB015N04L , IPB014N06N , IPB011N04L , IPB010N06N , IPB009N03L , IPA80R650CE , IPA80R460CE .
History: FDPF18N50T
History: FDPF18N50T
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