All MOSFET. IPB009N03L Datasheet

 

IPB009N03L MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPB009N03L
   Marking Code: 009N03L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 180 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 110 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 5700 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00095 Ohm
   Package: TO-263-7

 IPB009N03L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPB009N03L Datasheet (PDF)

 ..1. Size:441K  infineon
 ipb009n03l.pdf

IPB009N03L IPB009N03L

TypeIPB009N03L GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 30 V MOSFET for ORing and Uninterruptible Power Supply RDS(on),max 0.95 mW Qualified according to JEDEC1) for target applicationsID 180 A N-channel Logic level Ultra-low on-resistance RDS(on)PG-TO263-7 100% Avalanche tested Pb-free plating; RoHS compliantType Pack

 ..2. Size:494K  infineon
 ipb009n03l .pdf

IPB009N03L IPB009N03L

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 0.1. Size:1086K  infineon
 ipb009n03lg.pdf

IPB009N03L IPB009N03L

IPB009N03L GMOSFETD-PAK 7pinOptiMOS3 Power-Transistor, 30 VFeatures MOSFET for ORing and Uninterruptible Power Supplytab Qualified according to JEDEC1) for target applications N-channel Logic level1 Ultra-low on-resistance RDS(on) 100% Avalanche tested7 Pb-free plating; RoHS compliantTable 1 Key Performance ParametersDrainParameter Va

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IXTH160N075T

 

 
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