IPB009N03L Specs and Replacement

Type Designator: IPB009N03L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 5700 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00095 Ohm

Package: TO-263-7

IPB009N03L substitution

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IPB009N03L datasheet

 ..1. Size:441K  infineon
 ipb009n03l.pdf pdf_icon

IPB009N03L

Type IPB009N03L G OptiMOS 3 Power-Transistor Product Summary Features VDS 30 V MOSFET for ORing and Uninterruptible Power Supply RDS(on),max 0.95 mW Qualified according to JEDEC1) for target applications ID 180 A N-channel Logic level Ultra-low on-resistance R DS(on) PG-TO263-7 100% Avalanche tested Pb-free plating; RoHS compliant Type Pack... See More ⇒

 ..2. Size:494K  infineon
 ipb009n03l .pdf pdf_icon

IPB009N03L

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 0.1. Size:1086K  infineon
 ipb009n03lg.pdf pdf_icon

IPB009N03L

IPB009N03L G MOSFET D -PAK 7pin OptiMOS 3 Power-Transistor, 30 V Features MOSFET for ORing and Uninterruptible Power Supply tab Qualified according to JEDEC1) for target applications N-channel Logic level 1 Ultra-low on-resistance R DS(on) 100% Avalanche tested 7 Pb-free plating; RoHS compliant Table 1 Key Performance Parameters Drain Parameter Va... See More ⇒

Detailed specifications: IPB020N08N5, IPB017N10N5, IPB017N08N5, IPB015N08N5, IPB015N04L, IPB014N06N, IPB011N04L, IPB010N06N, 50N06, IPA80R650CE, IPA80R460CE, IPA80R310CE, IPA80R1K4CE, IPA80R1K0CE, IPA65R650CE, IPA65R420CFD, IPA65R310CFD

Keywords - IPB009N03L MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.