IPA80R1K0CE Specs and Replacement
Type Designator: IPA80R1K0CE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 32 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 33 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
Package: TO-220F
IPA80R1K0CE substitution
IPA80R1K0CE datasheet
ipa80r1k0ce.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 800V CoolMOS CE Power Transistor IPA80R1K0CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 800V CoolMOS CE Power Transistor IPA80R1K0CE TO-220 FP 1 Description CoolMOS CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combines safety with performan... See More ⇒
ipa80r1k0ce.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA80R1K0CE FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME... See More ⇒
ipa80r1k2p7.pdf
IPA80R1K2P7 MOSFET PG-TO 220 FP 800V CoolMOS P7 Power Device The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(o... See More ⇒
ipa80r1k4ce.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 800V CoolMOS CE Power Transistor IPA80R1K4CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 800V CoolMOS CE Power Transistor IPA80R1K4CE TO-220 FP 1 Description CoolMOS CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combines safety with performan... See More ⇒
Detailed specifications: IPB014N06N , IPB011N04L , IPB010N06N , IPB009N03L , IPA80R650CE , IPA80R460CE , IPA80R310CE , IPA80R1K4CE , IRLZ44N , IPA65R650CE , IPA65R420CFD , IPA65R310CFD , IPA65R225C7 , IPA65R190E6 , IPA65R190CFD , IPA65R190C7 , IPA65R190C6 .
Keywords - IPA80R1K0CE MOSFET specs
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IPA80R1K0CE substitution
IPA80R1K0CE replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
