All MOSFET. IRFP9130 Datasheet

 

IRFP9130 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFP9130

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 45(max) nC

Rise Time (tr): 140(max) nS

Drain-Source Capacitance (Cd): 450(max) pF

Maximum Drain-Source On-State Resistance (Rds): 0.3 Ohm

Package: TO3P

IRFP9130 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP9130 Datasheet (PDF)

0.1. irfp9130-33 irf9130-33 irf9530-33.pdf Size:520K _samsung

IRFP9130
IRFP9130

0.2. irf9130-33 irfp9130-33 irf9530-33.pdf Size:520K _samsung

IRFP9130
IRFP9130

 8.1. irfp9140.pdf Size:165K _international_rectifier

IRFP9130
IRFP9130

8.2. irfp9140npbf.pdf Size:236K _international_rectifier

IRFP9130
IRFP9130

PD - 95665IRFP9140NPbFHEXFET Power MOSFETl Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating TemperatureVDSS = -100Vl P-Channell Fast SwitchingRDS(on) = 0.117l Fully Avalanche RatedGl Lead-FreeID = -23ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-re

 8.3. irfp9140n.pdf Size:142K _international_rectifier

IRFP9130
IRFP9130

PD - 9.1492AIRFP9140NPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -100V 175C Operating Temperature P-ChannelRDS(on) = 0.117 Fast SwitchingG Fully Avalanche RatedID = -23ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistanc

8.4. irfp9140pbf.pdf Size:1757K _international_rectifier

IRFP9130
IRFP9130

PD-95991IRFP9140PbF Lead-Free12/22/04Document Number: 91238 www.vishay.com1IRFP9140PbFDocument Number: 91238 www.vishay.com2IRFP9140PbFDocument Number: 91238 www.vishay.com3IRFP9140PbFDocument Number: 91238 www.vishay.com4IRFP9140PbFDocument Number: 91238 www.vishay.com5IRFP9140PbFDocument Number: 91238 www.vishay.com6IRFP9140PbFPeak Diode Re

 8.5. irfp9140-43 irf9540-43.pdf Size:378K _samsung

IRFP9130
IRFP9130

8.6. irfp9140pbf sihfp9140.pdf Size:1478K _vishay

IRFP9130
IRFP9130

IRFP9140, SiHFP9140Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.20RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 61 Isolated Central Mounting HoleQgs (nC) 14 175 C Operating TemperatureQgd (nC) 29 Fast SwitchingConfiguration Single Ease of

8.7. irfp9140 sihfp9140.pdf Size:1444K _vishay

IRFP9130
IRFP9130

IRFP9140, SiHFP9140Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100 Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.20 RoHS P-ChannelCOMPLIANT Qg (Max.) (nC) 61 Isolated Central Mounting HoleQgs (nC) 14 175 C Operating TemperatureQgd (nC) 29 Fast SwitchingConfiguration Single Ease of Paralleli

8.8. irfp9140npbf.pdf Size:236K _infineon

IRFP9130
IRFP9130

PD - 95665IRFP9140NPbFHEXFET Power MOSFETl Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating TemperatureVDSS = -100Vl P-Channell Fast SwitchingRDS(on) = 0.117l Fully Avalanche RatedGl Lead-FreeID = -23ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-re

8.9. irfp9150.pdf Size:66K _intersil

IRFP9130
IRFP9130

IRFP9150Data Sheet August 1999 File Number 2293.425A, 100V, 0.150 Ohm, P-Channel Power FeaturesMOSFET 25A, 100VThis advanced power MOSFET is designed, tested, and rDS(ON) = 0.150guaranteed to withstand a specified level of energy in the Single Pulse Avalanche Energy Ratedbreakdown avalanche mode of operation. It is a P-Channelenhancement mode silicon-gate power f

8.10. irfp9140n.pdf Size:241K _inchange_semiconductor

IRFP9130
IRFP9130

isc P-Channel MOSFET Transistor IRFP9140NIIRFP9140NFEATURESStatic drain-source on-resistance:RDS(on)0.117Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extremely efficient and

Datasheet: IRFP450LC , IRFP451 , IRFP452 , IRFP453 , IRFP460 , IRFP460A , IRFP460LC , IRFP470 , IRF9530 , IRFP9131 , IRFP9132 , IRFP9133 , IRFP9140 , IRFP9140N , IRFP9141 , IRFP9142 , IRFP9143 .

 

 
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