IRFP9130 PDF and Equivalents Search

 

IRFP9130 Specs and Replacement

Type Designator: IRFP9130

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 140(max) nS

Cossⓘ - Output Capacitance: 450(max) pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO3P

IRFP9130 substitution

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IRFP9130 datasheet

 8.1. Size:142K  international rectifier
irfp9140n.pdf pdf_icon

IRFP9130

PD - 9.1492A IRFP9140N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175 C Operating Temperature P-Channel RDS(on) = 0.117 Fast Switching G Fully Avalanche Rated ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistanc... See More ⇒

 8.2. Size:165K  international rectifier
irfp9140.pdf pdf_icon

IRFP9130

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Detailed specifications: IRFP450LC , IRFP451 , IRFP452 , IRFP453 , IRFP460 , IRFP460A , IRFP460LC , IRFP470 , 2SK3568 , IRFP9131 , IRFP9132 , IRFP9133 , IRFP9140 , IRFP9140N , IRFP9141 , IRFP9142 , IRFP9143 .

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