IRFP9130 Datasheet and Replacement
Type Designator: IRFP9130
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 140(max) nS
Cossⓘ - Output Capacitance: 450(max) pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO3P
IRFP9130 substitution
IRFP9130 Datasheet (PDF)
irfp9140n.pdf

PD - 9.1492AIRFP9140NPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -100V 175C Operating Temperature P-ChannelRDS(on) = 0.117 Fast SwitchingG Fully Avalanche RatedID = -23ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistanc
Datasheet: IRFP450LC , IRFP451 , IRFP452 , IRFP453 , IRFP460 , IRFP460A , IRFP460LC , IRFP470 , AO3401 , IRFP9131 , IRFP9132 , IRFP9133 , IRFP9140 , IRFP9140N , IRFP9141 , IRFP9142 , IRFP9143 .
History: RFD3055 | IPI80N04S3-03
Keywords - IRFP9130 MOSFET datasheet
IRFP9130 cross reference
IRFP9130 equivalent finder
IRFP9130 lookup
IRFP9130 substitution
IRFP9130 replacement
History: RFD3055 | IPI80N04S3-03



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