IRFP9130 - Даташиты. Аналоги. Основные параметры

PD - 9.1492A IRFP9140N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175 C Operating Temperature P-Channel RDS(on) = 0.117 Fast Switching G Fully Avalanche Rated ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistanc

PD - 95665 IRFP9140NPbF HEXFET Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D l 175 C Operating Temperature VDSS = -100V l P-Channel l Fast Switching RDS(on) = 0.117 l Fully Avalanche Rated G l Lead-Free ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-re

PD-95991 IRFP9140PbF Lead-Free 12/22/04 Document Number 91238 www.vishay.com 1 IRFP9140PbF Document Number 91238 www.vishay.com 2 IRFP9140PbF Document Number 91238 www.vishay.com 3 IRFP9140PbF Document Number 91238 www.vishay.com 4 IRFP9140PbF Document Number 91238 www.vishay.com 5 IRFP9140PbF Document Number 91238 www.vishay.com 6 IRFP9140PbF Peak Diode Re

IRFP9140, SiHFP9140 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.20 RoHS P-Channel COMPLIANT Qg (Max.) (nC) 61 Isolated Central Mounting Hole Qgs (nC) 14 175 C Operating Temperature Qgd (nC) 29 Fast Switching Configuration Single Ease of Paralleli

IRFP9140, SiHFP9140 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.20 RoHS* P-Channel COMPLIANT Qg (Max.) (nC) 61 Isolated Central Mounting Hole Qgs (nC) 14 175 C Operating Temperature Qgd (nC) 29 Fast Switching Configuration Single Ease of

IRFP9150 Data Sheet August 1999 File Number 2293.4 25A, 100V, 0.150 Ohm, P-Channel Power Features MOSFET 25A, 100V This advanced power MOSFET is designed, tested, and rDS(ON) = 0.150 guaranteed to withstand a specified level of energy in the Single Pulse Avalanche Energy Rated breakdown avalanche mode of operation. It is a P-Channel enhancement mode silicon-gate power f

isc P-Channel MOSFET Transistor IRFP9140N IIRFP9140N FEATURES Static drain-source on-resistance RDS(on) 0.117 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and