IPA105N15N3 MOSFET. Datasheet pdf. Equivalent

   Type Designator: IPA105N15N3
   Marking Code: 105N15N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 37 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 41 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 378 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: TO-220F

IPA105N15N3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IPA105N15N3 Datasheet (PDF)

..1. Size:548K infineon
ipa105n15n3.pdf

IPA105N15N3 GTM 3 Power-TransistorProduct SummaryFeaturesV 1 D P ' 381>>5?A=1

..2. Size:201K inchange semiconductor
ipa105n15n3.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA105N15N3FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

0.1. Size:550K infineon
ipa105n15n3g.pdf