IRFP7530PBF MOSFET PDF: N-Ch, 60V, 195A. Full specification with pinout and replacement list

IRFP7530PBF PDF Specs and Replacement

   Type Designator: IRFP7530PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 341 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 195 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 141 nS
   Cossⓘ - Output Capacitance: 1266 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: TO247

IRFP7530PBF substitution

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IRFP7530PBF PDF Specs

..1. Size:540K international rectifier
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StrongIRFET IRFP7530PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 1.65m Half-bridge and full-bridge topologies max 2.00m G Synchronous rectifier applications ID (Silicon Limited) 281A Resonant mode power sup... See More ⇒

6.1. Size:242K inchange semiconductor
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isc N-Channel MOSFET Transistor IRFP7530 IIRFP7530 FEATURES Static drain-source on-resistance RDS(on) 2m Enhancement mode Vth =2.1 to 3.7V (VDS=VGS, ID=250 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Synchronous Rectification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA... See More ⇒

7.1. Size:538K international rectifier
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StrongIRFET IRFP7537PbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 60V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 2.75m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.30m Resonant mode power supplies S OR-ing and re... See More ⇒

7.2. Size:247K inchange semiconductor
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