FCB290N80 Datasheet and Replacement
Type Designator: FCB290N80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 212 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 17 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 75 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
Package: D2-PAK
- MOSFET Cross-Reference Search
FCB290N80 Datasheet (PDF)
fcb290n80.pdf

March 2015FCB290N80N-Channel SuperFET II MOSFET800 V, 17 A, 0.29 Features Description RDS(on) = 0.259 Typ.) SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 58 nC)charge balance technology for outstanding low on-resistance Low Eoss (Typ. 5.4 u
fcb290n80.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fcb290n80.pdf

Isc N-Channel MOSFET Transistor FCB290N80FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol
Datasheet: FCA20N60S , FCA20N60SF109 , FCAB2126 , FCB110N65F , FCB11N60FTM , FCB11N60TM , FCB20N60FTM , FCB20N60TM , 10N60 , FCB36N60NTM , FCD2250N80Z , FCD3400N80Z , FCD4N60TF , FCD4N60TM , FCD5N60TMWS , FCH041N60FF085 , FCH041N65FF085 .
History: 2SJ473-01S | IRF7759L2TR1PBF
Keywords - FCB290N80 MOSFET datasheet
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History: 2SJ473-01S | IRF7759L2TR1PBF



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