FCD2250N80Z MOSFET. Datasheet pdf. Equivalent
Type Designator: FCD2250N80Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 39 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 2.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 11 nC
trⓘ - Rise Time: 6.7 nS
Cossⓘ - Output Capacitance: 16 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.25 Ohm
Package: D-PAK
FCD2250N80Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FCD2250N80Z Datasheet (PDF)
fcd2250n80z.pdf
December 2014FCD2250N80ZN-Channel SuperFET II MOSFET800 V, 2.6 A, 2.25 Features Description RDS(on) = 1.8 Typ.) SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 11 nC)charge balance technology for outstanding low on-resistance Low Eoss (Typ. 1
fcd2250n80z.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor FCD2250N80ZFEATURESWith TO-252(DPAK) packagingUIS capabilityHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsAD-AC power supplyLED lightingABSOLUTE MAXIMUM RATINGS(T =25
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
