All MOSFET. FCD2250N80Z Datasheet

 

FCD2250N80Z Datasheet and Replacement


   Type Designator: FCD2250N80Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6.7 nS
   Cossⓘ - Output Capacitance: 16 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.25 Ohm
   Package: D-PAK
 

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FCD2250N80Z Datasheet (PDF)

 ..1. Size:758K  fairchild semi
 fcd2250n80z.pdf pdf_icon

FCD2250N80Z

December 2014FCD2250N80ZN-Channel SuperFET II MOSFET800 V, 2.6 A, 2.25 Features Description RDS(on) = 1.8 Typ.) SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 11 nC)charge balance technology for outstanding low on-resistance Low Eoss (Typ. 1

 ..2. Size:209K  inchange semiconductor
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FCD2250N80Z

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FCD2250N80ZFEATURESWith TO-252(DPAK) packagingUIS capabilityHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsAD-AC power supplyLED lightingABSOLUTE MAXIMUM RATINGS(T =25

Datasheet: FCAB2126 , FCB110N65F , FCB11N60FTM , FCB11N60TM , FCB20N60FTM , FCB20N60TM , FCB290N80 , FCB36N60NTM , IRF3710 , FCD3400N80Z , FCD4N60TF , FCD4N60TM , FCD5N60TMWS , FCH041N60FF085 , FCH041N65FF085 , FCH070N60E , FCH20N60 .

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