FCD2250N80Z Specs and Replacement

Type Designator: FCD2250N80Z

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 39 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.7 nS

Cossⓘ - Output Capacitance: 16 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.25 Ohm

Package: D-PAK

FCD2250N80Z substitution

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FCD2250N80Z datasheet

 ..1. Size:758K  fairchild semi
 fcd2250n80z.pdf pdf_icon

FCD2250N80Z

December 2014 FCD2250N80Z N-Channel SuperFET II MOSFET 800 V, 2.6 A, 2.25 Features Description RDS(on) = 1.8 Typ.) SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 11 nC) charge balance technology for outstanding low on-resistance Low Eoss (Typ. 1... See More ⇒

 ..2. Size:209K  inchange semiconductor
 fcd2250n80z.pdf pdf_icon

FCD2250N80Z

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FCD2250N80Z FEATURES With TO-252(DPAK) packaging UIS capability High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications AD-AC power supply LED lighting ABSOLUTE MAXIMUM RATINGS(T =25 ... See More ⇒

Detailed specifications: FCAB2126, FCB110N65F, FCB11N60FTM, FCB11N60TM, FCB20N60FTM, FCB20N60TM, FCB290N80, FCB36N60NTM, AO3400, FCD3400N80Z, FCD4N60TF, FCD4N60TM, FCD5N60TMWS, FCH041N60FF085, FCH041N65FF085, FCH070N60E, FCH20N60

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.