All MOSFET. FCD4N60TM Datasheet

 

FCD4N60TM Datasheet and Replacement


   Type Designator: FCD4N60TM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 3.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12.8 nC
   trⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: D-PAK
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FCD4N60TM Datasheet (PDF)

 ..1. Size:478K  fairchild semi
 fcd4n60tf fcd4n60tm.pdf pdf_icon

FCD4N60TM

October 2013FCD4N60N-Channel SuperFET MOSFET600 V, 3.9 A, 1.2 Features Description 650 V @TJ = 150 C SuperFET MOSFET is Fairchild Semiconductors first genera-tion of high voltage super-junction (SJ) MOSFET family that is Typ. RDS(on) = 1.0 utilizing charge balance technology for outstanding low on- Ultra Low Gate Charge (Typ. Qg = 12.8 nC)resistance

 7.1. Size:922K  fairchild semi
 fcd4n60.pdf pdf_icon

FCD4N60TM

December 2008 TMSuperFETFCD4N60 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 1.0balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg = 12.8nC) lower gate charge performance.

Datasheet: FCB11N60TM , FCB20N60FTM , FCB20N60TM , FCB290N80 , FCB36N60NTM , FCD2250N80Z , FCD3400N80Z , FCD4N60TF , IRFB4227 , FCD5N60TMWS , FCH041N60FF085 , FCH041N65FF085 , FCH070N60E , FCH20N60 , FCH47N60F133 , FCI11N60 , FCP20N60FS .

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