FCD4N60TM MOSFET. Datasheet pdf. Equivalent
Type Designator: FCD4N60TM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 3.9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12.8 nC
trⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 210 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: D-PAK
FCD4N60TM Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FCD4N60TM Datasheet (PDF)
fcd4n60tf fcd4n60tm.pdf
October 2013FCD4N60N-Channel SuperFET MOSFET600 V, 3.9 A, 1.2 Features Description 650 V @TJ = 150 C SuperFET MOSFET is Fairchild Semiconductors first genera-tion of high voltage super-junction (SJ) MOSFET family that is Typ. RDS(on) = 1.0 utilizing charge balance technology for outstanding low on- Ultra Low Gate Charge (Typ. Qg = 12.8 nC)resistance
fcd4n60.pdf
December 2008 TMSuperFETFCD4N60 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 1.0balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg = 12.8nC) lower gate charge performance.
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
