FCD4N60TM PDF and Equivalents Search

 

FCD4N60TM Specs and Replacement

Type Designator: FCD4N60TM

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 210 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: D-PAK

FCD4N60TM substitution

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FCD4N60TM datasheet

 ..1. Size:478K  fairchild semi
 fcd4n60tf fcd4n60tm.pdf pdf_icon

FCD4N60TM

October 2013 FCD4N60 N-Channel SuperFET MOSFET 600 V, 3.9 A, 1.2 Features Description 650 V @TJ = 150 C SuperFET MOSFET is Fairchild Semiconductor s first genera- tion of high voltage super-junction (SJ) MOSFET family that is Typ. RDS(on) = 1.0 utilizing charge balance technology for outstanding low on- Ultra Low Gate Charge (Typ. Qg = 12.8 nC) resistance ... See More ⇒

 7.1. Size:922K  fairchild semi
 fcd4n60.pdf pdf_icon

FCD4N60TM

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Detailed specifications: FCB11N60TM , FCB20N60FTM , FCB20N60TM , FCB290N80 , FCB36N60NTM , FCD2250N80Z , FCD3400N80Z , FCD4N60TF , 10N60 , FCD5N60TMWS , FCH041N60FF085 , FCH041N65FF085 , FCH070N60E , FCH20N60 , FCH47N60F133 , FCI11N60 , FCP20N60FS .

Keywords - FCD4N60TM MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 


 
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