All MOSFET. FCD4N60TM Datasheet

 

FCD4N60TM MOSFET. Datasheet pdf. Equivalent

Type Designator: FCD4N60TM

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 3.9 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 45 nS

Drain-Source Capacitance (Cd): 210 pF

Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm

Package: D-PAK

FCD4N60TM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FCD4N60TM Datasheet (PDF)

0.1. fcd4n60tf fcd4n60tm.pdf Size:478K _fairchild_semi

FCD4N60TM FCD4N60TM

October 2013 FCD4N60 N-Channel SuperFET® MOSFET 600 V, 3.9 A, 1.2  Features Description • 650 V @TJ = 150 °C SuperFET® MOSFET is Fairchild Semiconductor’s first genera- tion of high voltage super-junction (SJ) MOSFET family that is • Typ. RDS(on) = 1.0  utilizing charge balance technology for outstanding low on- • Ultra Low Gate Charge (Typ. Qg = 12.8 nC) resistance

7.1. fcd4n60.pdf Size:922K _fairchild_semi

FCD4N60TM FCD4N60TM

December 2008 TM SuperFET FCD4N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. RDS(on) = 1.0Ω balance mechanism for outstanding low on-resistance and • Ultra low gate charge (typ. Qg = 12.8nC) lower gate charge performance.

 

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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