All MOSFET. FDA2712 Datasheet

 

FDA2712 Datasheet and Replacement


   Type Designator: FDA2712
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 357 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 64 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 99 nC
   tr ⓘ - Rise Time: 371 nS
   Cossⓘ - Output Capacitance: 550 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
   Package: TO-3PN
 

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FDA2712 Datasheet (PDF)

 ..1. Size:356K  fairchild semi
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FDA2712

April 2007UltraFETFDA2712tmN-Channel UltraFET Trench MOSFET 250V, 64A, 34mFeatures Description RDS(on) = 29.2m @VGS = 10 V, ID = 40A This N-Channel MOSFET is produced using Fairchild Semicon- Fast switching speed ductors advanced PowerTrench process that has been especial-ly tailored to minimize the on-state resistance and yet maintain Low gate charge H

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: FDA62N28

Keywords - FDA2712 MOSFET datasheet

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