FDA2712 Specs and Replacement

Type Designator: FDA2712

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 357 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 64 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 371 nS

Cossⓘ - Output Capacitance: 550 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm

Package: TO-3PN

FDA2712 substitution

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FDA2712 datasheet

 ..1. Size:356K  fairchild semi
 fda2712.pdf pdf_icon

FDA2712

April 2007 UltraFET FDA2712 tm N-Channel UltraFET Trench MOSFET 250V, 64A, 34m Features Description RDS(on) = 29.2m @VGS = 10 V, ID = 40A This N-Channel MOSFET is produced using Fairchild Semicon- Fast switching speed ductor s advanced PowerTrench process that has been especial- ly tailored to minimize the on-state resistance and yet maintain Low gate charge H... See More ⇒

Detailed specifications: FCPF290N80, FCPF4300N80Z, FCPF7N60T, FCPF7N60YDTU, FCU2250N80Z, FCU3400N80Z, FCU7N60TU, FDA16N50, IRFP260, FDA62N28, FDA75N28, FDA79N15, FDAF59N30, FDAF62N28, FDAF69N25, FDAF75N28, FDB14AN06LA0

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