All MOSFET. FDA2712 Datasheet

 

FDA2712 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDA2712
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 357 W
   Maximum Drain-Source Voltage |Vds|: 250 V
   Maximum Gate-Source Voltage |Vgs|: 30 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
   Maximum Drain Current |Id|: 64 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 99 nC
   Rise Time (tr): 371 nS
   Drain-Source Capacitance (Cd): 550 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.034 Ohm
   Package: TO-3PN

 FDA2712 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDA2712 Datasheet (PDF)

 ..1. Size:356K  fairchild semi
 fda2712.pdf

FDA2712 FDA2712

April 2007UltraFETFDA2712tmN-Channel UltraFET Trench MOSFET 250V, 64A, 34mFeatures Description RDS(on) = 29.2m @VGS = 10 V, ID = 40A This N-Channel MOSFET is produced using Fairchild Semicon- Fast switching speed ductors advanced PowerTrench process that has been especial-ly tailored to minimize the on-state resistance and yet maintain Low gate charge H

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 13N50 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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