FDA62N28 Datasheet and Replacement
Type Designator: FDA62N28
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 500 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 280 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 62 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 560 nS
Cossⓘ - Output Capacitance: 730 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.051 Ohm
Package: TO-3PN
FDA62N28 substitution
FDA62N28 Datasheet (PDF)
fda62n28.pdf
TMUniFETFDA62N28280V N-Channel MOSFETFeatures Description 62A, 280V, RDS(on) = 0.051 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 77 nC)DMOS technology. Low Crss ( typical 83 pF)This advanced technology has been especially tailored to mini-
Datasheet: FCPF4300N80Z , FCPF7N60T , FCPF7N60YDTU , FCU2250N80Z , FCU3400N80Z , FCU7N60TU , FDA16N50 , FDA2712 , 4435 , FDA75N28 , FDA79N15 , FDAF59N30 , FDAF62N28 , FDAF69N25 , FDAF75N28 , FDB14AN06LA0 , FDB20AN06A0 .
History: IPS65R950C6
Keywords - FDA62N28 MOSFET datasheet
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: IPS65R950C6
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