All MOSFET. FDA62N28 Datasheet

 

FDA62N28 Datasheet and Replacement


   Type Designator: FDA62N28
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 280 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 62 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 77 nC
   tr ⓘ - Rise Time: 560 nS
   Cossⓘ - Output Capacitance: 730 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.051 Ohm
   Package: TO-3PN
 

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FDA62N28 Datasheet (PDF)

 ..1. Size:441K  fairchild semi
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FDA62N28

TMUniFETFDA62N28280V N-Channel MOSFETFeatures Description 62A, 280V, RDS(on) = 0.051 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 77 nC)DMOS technology. Low Crss ( typical 83 pF)This advanced technology has been especially tailored to mini-

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