FDA62N28 Specs and Replacement
Type Designator: FDA62N28
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 500 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 280 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 62 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 560 nS
Cossⓘ - Output Capacitance: 730 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.051 Ohm
Package: TO-3PN
FDA62N28 substitution
- MOSFET ⓘ Cross-Reference Search
FDA62N28 datasheet
fda62n28.pdf
TM UniFET FDA62N28 280V N-Channel MOSFET Features Description 62A, 280V, RDS(on) = 0.051 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 77 nC) DMOS technology. Low Crss ( typical 83 pF) This advanced technology has been especially tailored to mini- ... See More ⇒
Detailed specifications: FCPF4300N80Z, FCPF7N60T, FCPF7N60YDTU, FCU2250N80Z, FCU3400N80Z, FCU7N60TU, FDA16N50, FDA2712, 4435, FDA75N28, FDA79N15, FDAF59N30, FDAF62N28, FDAF69N25, FDAF75N28, FDB14AN06LA0, FDB20AN06A0
Keywords - FDA62N28 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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