All MOSFET. FDA79N15 Datasheet

 

FDA79N15 Datasheet and Replacement


   Type Designator: FDA79N15
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 417 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 79 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 200 nS
   Cossⓘ - Output Capacitance: 730 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO-3PN
 

 FDA79N15 substitution

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FDA79N15 Datasheet (PDF)

 ..1. Size:594K  fairchild semi
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FDA79N15

TMUniFETFDA79N15150V N-Channel MOSFETFeatures Description 79A, 150V, RDS(on) = 0.03 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 56 nC)DMOS technology. Low Crss ( typical 96 pF)This advanced technology has been especially tailored to mini- F

Datasheet: FCPF7N60YDTU , FCU2250N80Z , FCU3400N80Z , FCU7N60TU , FDA16N50 , FDA2712 , FDA62N28 , FDA75N28 , SPP20N60C3 , FDAF59N30 , FDAF62N28 , FDAF69N25 , FDAF75N28 , FDB14AN06LA0 , FDB20AN06A0 , FDB24AN06LA0 , FDB2570 .

History: IPB65R190C6 | STB5NK52ZD-1 | SQD50P04-13L | SSM6K406TU | STB5NK50ZT4 | IPB65R150CFDA

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