FDA79N15 Specs and Replacement

Type Designator: FDA79N15

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 417 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 79 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 200 nS

Cossⓘ - Output Capacitance: 730 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: TO-3PN

FDA79N15 substitution

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FDA79N15 datasheet

 ..1. Size:594K  fairchild semi
 fda79n15.pdf pdf_icon

FDA79N15

TM UniFET FDA79N15 150V N-Channel MOSFET Features Description 79A, 150V, RDS(on) = 0.03 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 56 nC) DMOS technology. Low Crss ( typical 96 pF) This advanced technology has been especially tailored to mini- F... See More ⇒

Detailed specifications: FCPF7N60YDTU, FCU2250N80Z, FCU3400N80Z, FCU7N60TU, FDA16N50, FDA2712, FDA62N28, FDA75N28, SKD502T, FDAF59N30, FDAF62N28, FDAF69N25, FDAF75N28, FDB14AN06LA0, FDB20AN06A0, FDB24AN06LA0, FDB2570

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs