FDA79N15 Datasheet and Replacement
Type Designator: FDA79N15
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 417 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 79 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 200 nS
Cossⓘ - Output Capacitance: 730 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TO-3PN
FDA79N15 substitution
FDA79N15 Datasheet (PDF)
fda79n15.pdf

TMUniFETFDA79N15150V N-Channel MOSFETFeatures Description 79A, 150V, RDS(on) = 0.03 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 56 nC)DMOS technology. Low Crss ( typical 96 pF)This advanced technology has been especially tailored to mini- F
Datasheet: FCPF7N60YDTU , FCU2250N80Z , FCU3400N80Z , FCU7N60TU , FDA16N50 , FDA2712 , FDA62N28 , FDA75N28 , IRF9540N , FDAF59N30 , FDAF62N28 , FDAF69N25 , FDAF75N28 , FDB14AN06LA0 , FDB20AN06A0 , FDB24AN06LA0 , FDB2570 .
History: WMJ80N65F2 | SMY60
Keywords - FDA79N15 MOSFET datasheet
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History: WMJ80N65F2 | SMY60



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